Growth of Thick ε(κ)-$ Ga_{2} $$ O_{3} $ Films by Halide Vapor Phase Epitaxy

Abstract High crystalline quality epitaxial films of orthorhombic gallium oxide ε(κ)-$ Ga_{2} $$ O_{3} $ with a thickness of more 20 μm have been grown for the first time using halide vapor phase epitaxy. Sapphire wafers with preliminarily deposited GaN layers were used as substrates. The properties...
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Autor*in:	Stepanov, S. I. [verfasserIn] Pechnikov, A. I. Scheglov, M. P. Chikiryaka, A. V. Nikolaev, V. I.

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2023

Anmerkung:	© Pleiades Publishing, Ltd. 2023. ISSN 1063-7850, Technical Physics Letters, 2023, Vol. 49, Suppl. 2, pp. S142–S145. © Pleiades Publishing, Ltd., 2023. Russian Text © The Author(s), 2022, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2022, Vol. 48, No. 19, pp. 35–38. English Text © Ioffe Institute, 2022.

Übergeordnetes Werk:	Enthalten in: Technical physics letters - Pleiades Publishing, 1993, 49(2023), Suppl 2 vom: Dez., Seite S142-S145
Übergeordnetes Werk:	volume:49 ; year:2023 ; number:Suppl 2 ; month:12 ; pages:S142-S145

Links:	Volltext

DOI / URN:	10.1134/S1063785023900583

Katalog-ID:	SPR055146716

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520			\|a Abstract High crystalline quality epitaxial films of orthorhombic gallium oxide ε(κ)-$ Ga_{2} $$ O_{3} $ with a thickness of more 20 μm have been grown for the first time using halide vapor phase epitaxy. Sapphire wafers with preliminarily deposited GaN layers were used as substrates. The properties of the produced films are studied by X-ray diffraction and electron microscopy. The results are considered an important step towards obtaining thick layers and quasi-bulk ε(κ)-$ Ga_{2} $$ O_{3} $ crystals for practical applications in electronics and sensor technology.
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allfields	10.1134/S1063785023900583 doi (DE-627)SPR055146716 (SPR)S1063785023900583-e DE-627 ger DE-627 rakwb eng 530 VZ 33.00 bkl 50.30 bkl Stepanov, S. I. verfasserin aut Growth of Thick ε(κ)-$ Ga_{2} $$ O_{3} $ Films by Halide Vapor Phase Epitaxy 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Pleiades Publishing, Ltd. 2023. ISSN 1063-7850, Technical Physics Letters, 2023, Vol. 49, Suppl. 2, pp. S142–S145. © Pleiades Publishing, Ltd., 2023. Russian Text © The Author(s), 2022, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2022, Vol. 48, No. 19, pp. 35–38. English Text © Ioffe Institute, 2022. Abstract High crystalline quality epitaxial films of orthorhombic gallium oxide ε(κ)-$ Ga_{2} $$ O_{3} $ with a thickness of more 20 μm have been grown for the first time using halide vapor phase epitaxy. Sapphire wafers with preliminarily deposited GaN layers were used as substrates. The properties of the produced films are studied by X-ray diffraction and electron microscopy. The results are considered an important step towards obtaining thick layers and quasi-bulk ε(κ)-$ Ga_{2} $$ O_{3} $ crystals for practical applications in electronics and sensor technology. Pechnikov, A. I. aut Scheglov, M. P. aut Chikiryaka, A. V. aut Nikolaev, V. I. aut Enthalten in Technical physics letters Pleiades Publishing, 1993 49(2023), Suppl 2 vom: Dez., Seite S142-S145 (DE-627)319123839 (DE-600)2023931-2 1090-6533 nnns volume:49 year:2023 number:Suppl 2 month:12 pages:S142-S145 https://dx.doi.org/10.1134/S1063785023900583 lizenzpflichtig Volltext SYSFLAG_0 GBV_SPRINGER SSG-OPC-MAT GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 VZ 50.30 VZ AR 49 2023 Suppl 2 12 S142-S145
spelling	10.1134/S1063785023900583 doi (DE-627)SPR055146716 (SPR)S1063785023900583-e DE-627 ger DE-627 rakwb eng 530 VZ 33.00 bkl 50.30 bkl Stepanov, S. I. verfasserin aut Growth of Thick ε(κ)-$ Ga_{2} $$ O_{3} $ Films by Halide Vapor Phase Epitaxy 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Pleiades Publishing, Ltd. 2023. ISSN 1063-7850, Technical Physics Letters, 2023, Vol. 49, Suppl. 2, pp. S142–S145. © Pleiades Publishing, Ltd., 2023. Russian Text © The Author(s), 2022, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2022, Vol. 48, No. 19, pp. 35–38. English Text © Ioffe Institute, 2022. Abstract High crystalline quality epitaxial films of orthorhombic gallium oxide ε(κ)-$ Ga_{2} $$ O_{3} $ with a thickness of more 20 μm have been grown for the first time using halide vapor phase epitaxy. Sapphire wafers with preliminarily deposited GaN layers were used as substrates. The properties of the produced films are studied by X-ray diffraction and electron microscopy. The results are considered an important step towards obtaining thick layers and quasi-bulk ε(κ)-$ Ga_{2} $$ O_{3} $ crystals for practical applications in electronics and sensor technology. Pechnikov, A. I. aut Scheglov, M. P. aut Chikiryaka, A. V. aut Nikolaev, V. I. aut Enthalten in Technical physics letters Pleiades Publishing, 1993 49(2023), Suppl 2 vom: Dez., Seite S142-S145 (DE-627)319123839 (DE-600)2023931-2 1090-6533 nnns volume:49 year:2023 number:Suppl 2 month:12 pages:S142-S145 https://dx.doi.org/10.1134/S1063785023900583 lizenzpflichtig Volltext SYSFLAG_0 GBV_SPRINGER SSG-OPC-MAT GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 VZ 50.30 VZ AR 49 2023 Suppl 2 12 S142-S145
allfields_unstemmed	10.1134/S1063785023900583 doi (DE-627)SPR055146716 (SPR)S1063785023900583-e DE-627 ger DE-627 rakwb eng 530 VZ 33.00 bkl 50.30 bkl Stepanov, S. I. verfasserin aut Growth of Thick ε(κ)-$ Ga_{2} $$ O_{3} $ Films by Halide Vapor Phase Epitaxy 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Pleiades Publishing, Ltd. 2023. ISSN 1063-7850, Technical Physics Letters, 2023, Vol. 49, Suppl. 2, pp. S142–S145. © Pleiades Publishing, Ltd., 2023. Russian Text © The Author(s), 2022, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2022, Vol. 48, No. 19, pp. 35–38. English Text © Ioffe Institute, 2022. Abstract High crystalline quality epitaxial films of orthorhombic gallium oxide ε(κ)-$ Ga_{2} $$ O_{3} $ with a thickness of more 20 μm have been grown for the first time using halide vapor phase epitaxy. Sapphire wafers with preliminarily deposited GaN layers were used as substrates. The properties of the produced films are studied by X-ray diffraction and electron microscopy. The results are considered an important step towards obtaining thick layers and quasi-bulk ε(κ)-$ Ga_{2} $$ O_{3} $ crystals for practical applications in electronics and sensor technology. Pechnikov, A. I. aut Scheglov, M. P. aut Chikiryaka, A. V. aut Nikolaev, V. I. aut Enthalten in Technical physics letters Pleiades Publishing, 1993 49(2023), Suppl 2 vom: Dez., Seite S142-S145 (DE-627)319123839 (DE-600)2023931-2 1090-6533 nnns volume:49 year:2023 number:Suppl 2 month:12 pages:S142-S145 https://dx.doi.org/10.1134/S1063785023900583 lizenzpflichtig Volltext SYSFLAG_0 GBV_SPRINGER SSG-OPC-MAT GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 VZ 50.30 VZ AR 49 2023 Suppl 2 12 S142-S145
allfieldsGer	10.1134/S1063785023900583 doi (DE-627)SPR055146716 (SPR)S1063785023900583-e DE-627 ger DE-627 rakwb eng 530 VZ 33.00 bkl 50.30 bkl Stepanov, S. I. verfasserin aut Growth of Thick ε(κ)-$ Ga_{2} $$ O_{3} $ Films by Halide Vapor Phase Epitaxy 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Pleiades Publishing, Ltd. 2023. ISSN 1063-7850, Technical Physics Letters, 2023, Vol. 49, Suppl. 2, pp. S142–S145. © Pleiades Publishing, Ltd., 2023. Russian Text © The Author(s), 2022, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2022, Vol. 48, No. 19, pp. 35–38. English Text © Ioffe Institute, 2022. Abstract High crystalline quality epitaxial films of orthorhombic gallium oxide ε(κ)-$ Ga_{2} $$ O_{3} $ with a thickness of more 20 μm have been grown for the first time using halide vapor phase epitaxy. Sapphire wafers with preliminarily deposited GaN layers were used as substrates. The properties of the produced films are studied by X-ray diffraction and electron microscopy. The results are considered an important step towards obtaining thick layers and quasi-bulk ε(κ)-$ Ga_{2} $$ O_{3} $ crystals for practical applications in electronics and sensor technology. Pechnikov, A. I. aut Scheglov, M. P. aut Chikiryaka, A. V. aut Nikolaev, V. I. aut Enthalten in Technical physics letters Pleiades Publishing, 1993 49(2023), Suppl 2 vom: Dez., Seite S142-S145 (DE-627)319123839 (DE-600)2023931-2 1090-6533 nnns volume:49 year:2023 number:Suppl 2 month:12 pages:S142-S145 https://dx.doi.org/10.1134/S1063785023900583 lizenzpflichtig Volltext SYSFLAG_0 GBV_SPRINGER SSG-OPC-MAT GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 VZ 50.30 VZ AR 49 2023 Suppl 2 12 S142-S145
allfieldsSound	10.1134/S1063785023900583 doi (DE-627)SPR055146716 (SPR)S1063785023900583-e DE-627 ger DE-627 rakwb eng 530 VZ 33.00 bkl 50.30 bkl Stepanov, S. I. verfasserin aut Growth of Thick ε(κ)-$ Ga_{2} $$ O_{3} $ Films by Halide Vapor Phase Epitaxy 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Pleiades Publishing, Ltd. 2023. ISSN 1063-7850, Technical Physics Letters, 2023, Vol. 49, Suppl. 2, pp. S142–S145. © Pleiades Publishing, Ltd., 2023. Russian Text © The Author(s), 2022, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2022, Vol. 48, No. 19, pp. 35–38. English Text © Ioffe Institute, 2022. Abstract High crystalline quality epitaxial films of orthorhombic gallium oxide ε(κ)-$ Ga_{2} $$ O_{3} $ with a thickness of more 20 μm have been grown for the first time using halide vapor phase epitaxy. Sapphire wafers with preliminarily deposited GaN layers were used as substrates. The properties of the produced films are studied by X-ray diffraction and electron microscopy. The results are considered an important step towards obtaining thick layers and quasi-bulk ε(κ)-$ Ga_{2} $$ O_{3} $ crystals for practical applications in electronics and sensor technology. Pechnikov, A. I. aut Scheglov, M. P. aut Chikiryaka, A. V. aut Nikolaev, V. I. aut Enthalten in Technical physics letters Pleiades Publishing, 1993 49(2023), Suppl 2 vom: Dez., Seite S142-S145 (DE-627)319123839 (DE-600)2023931-2 1090-6533 nnns volume:49 year:2023 number:Suppl 2 month:12 pages:S142-S145 https://dx.doi.org/10.1134/S1063785023900583 lizenzpflichtig Volltext SYSFLAG_0 GBV_SPRINGER SSG-OPC-MAT GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 VZ 50.30 VZ AR 49 2023 Suppl 2 12 S142-S145
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author	Stepanov, S. I.
spellingShingle	Stepanov, S. I. ddc 530 bkl 33.00 bkl 50.30 Growth of Thick ε(κ)-$ Ga_{2} $$ O_{3} $ Films by Halide Vapor Phase Epitaxy
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title_full	Growth of Thick ε(κ)-$ Ga_{2} $$ O_{3} $ Films by Halide Vapor Phase Epitaxy
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title_sort	growth of thick ε(κ)-$ ga_{2} $$ o_{3} $ films by halide vapor phase epitaxy
title_auth	Growth of Thick ε(κ)-$ Ga_{2} $$ O_{3} $ Films by Halide Vapor Phase Epitaxy
abstract	Abstract High crystalline quality epitaxial films of orthorhombic gallium oxide ε(κ)-$ Ga_{2} $$ O_{3} $ with a thickness of more 20 μm have been grown for the first time using halide vapor phase epitaxy. Sapphire wafers with preliminarily deposited GaN layers were used as substrates. The properties of the produced films are studied by X-ray diffraction and electron microscopy. The results are considered an important step towards obtaining thick layers and quasi-bulk ε(κ)-$ Ga_{2} $$ O_{3} $ crystals for practical applications in electronics and sensor technology. © Pleiades Publishing, Ltd. 2023. ISSN 1063-7850, Technical Physics Letters, 2023, Vol. 49, Suppl. 2, pp. S142–S145. © Pleiades Publishing, Ltd., 2023. Russian Text © The Author(s), 2022, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2022, Vol. 48, No. 19, pp. 35–38. English Text © Ioffe Institute, 2022.
abstractGer	Abstract High crystalline quality epitaxial films of orthorhombic gallium oxide ε(κ)-$ Ga_{2} $$ O_{3} $ with a thickness of more 20 μm have been grown for the first time using halide vapor phase epitaxy. Sapphire wafers with preliminarily deposited GaN layers were used as substrates. The properties of the produced films are studied by X-ray diffraction and electron microscopy. The results are considered an important step towards obtaining thick layers and quasi-bulk ε(κ)-$ Ga_{2} $$ O_{3} $ crystals for practical applications in electronics and sensor technology. © Pleiades Publishing, Ltd. 2023. ISSN 1063-7850, Technical Physics Letters, 2023, Vol. 49, Suppl. 2, pp. S142–S145. © Pleiades Publishing, Ltd., 2023. Russian Text © The Author(s), 2022, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2022, Vol. 48, No. 19, pp. 35–38. English Text © Ioffe Institute, 2022.
abstract_unstemmed	Abstract High crystalline quality epitaxial films of orthorhombic gallium oxide ε(κ)-$ Ga_{2} $$ O_{3} $ with a thickness of more 20 μm have been grown for the first time using halide vapor phase epitaxy. Sapphire wafers with preliminarily deposited GaN layers were used as substrates. The properties of the produced films are studied by X-ray diffraction and electron microscopy. The results are considered an important step towards obtaining thick layers and quasi-bulk ε(κ)-$ Ga_{2} $$ O_{3} $ crystals for practical applications in electronics and sensor technology. © Pleiades Publishing, Ltd. 2023. ISSN 1063-7850, Technical Physics Letters, 2023, Vol. 49, Suppl. 2, pp. S142–S145. © Pleiades Publishing, Ltd., 2023. Russian Text © The Author(s), 2022, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2022, Vol. 48, No. 19, pp. 35–38. English Text © Ioffe Institute, 2022.
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container_issue	Suppl 2
title_short	Growth of Thick ε(κ)-$ Ga_{2} $$ O_{3} $ Films by Halide Vapor Phase Epitaxy
url	https://dx.doi.org/10.1134/S1063785023900583
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author2	Pechnikov, A. I. Scheglov, M. P. Chikiryaka, A. V. Nikolaev, V. I.
author2Str	Pechnikov, A. I. Scheglov, M. P. Chikiryaka, A. V. Nikolaev, V. I.
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doi_str	10.1134/S1063785023900583
up_date	2024-07-03T13:40:37.694Z
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