Some Properties of Argon as an Actinometric Atom. II. Metastable Levels Quenching

Abstract Argon metastable levels quenching rate constant data are collected and analyzed from about 30 experimental studies. The main attention is paid to molecules that are used in plasma-chemical processes in microelectronics. All data are presented in detailed tables. They correspond to room temp...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Kudrya, V. P. [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2023

Anmerkung:	© Pleiades Publishing, Ltd. 2023. ISSN 1063-7397, Russian Microelectronics, 2023, Vol. 52, Suppl. 1, pp. S290–S298. © Pleiades Publishing, Ltd., 2023.

Übergeordnetes Werk:	Enthalten in: Russian microelectronics - Pleiades Publishing, 2000, 52(2023), Suppl 1 vom: Dez., Seite S290-S298
Übergeordnetes Werk:	volume:52 ; year:2023 ; number:Suppl 1 ; month:12 ; pages:S290-S298

Links:	Volltext

DOI / URN:	10.1134/S1063739723600358

Katalog-ID:	SPR055252656

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520			\|a Abstract Argon metastable levels quenching rate constant data are collected and analyzed from about 30 experimental studies. The main attention is paid to molecules that are used in plasma-chemical processes in microelectronics. All data are presented in detailed tables. They correspond to room temperature. The results obtained can be useful in developing models of the actinometric method for diagnosing low-temperature low-pressure plasma, as well as models of low-pressure discharges in argon-containing mixtures.
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912			\|a GBV_ILN_73
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912			\|a GBV_ILN_95
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912			\|a GBV_ILN_110
912			\|a GBV_ILN_120
912			\|a GBV_ILN_138
912			\|a GBV_ILN_150
912			\|a GBV_ILN_151
912			\|a GBV_ILN_152
912			\|a GBV_ILN_161
912			\|a GBV_ILN_170
912			\|a GBV_ILN_171
912			\|a GBV_ILN_187
912			\|a GBV_ILN_213
912			\|a GBV_ILN_224
912			\|a GBV_ILN_230
912			\|a GBV_ILN_250
912			\|a GBV_ILN_281
912			\|a GBV_ILN_285
912			\|a GBV_ILN_293
912			\|a GBV_ILN_370
912			\|a GBV_ILN_602
912			\|a GBV_ILN_636
912			\|a GBV_ILN_702
912			\|a GBV_ILN_2001
912			\|a GBV_ILN_2003
912			\|a GBV_ILN_2004
912			\|a GBV_ILN_2005
912			\|a GBV_ILN_2006
912			\|a GBV_ILN_2007
912			\|a GBV_ILN_2008
912			\|a GBV_ILN_2009
912			\|a GBV_ILN_2010
912			\|a GBV_ILN_2011
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2015
912			\|a GBV_ILN_2020
912			\|a GBV_ILN_2021
912			\|a GBV_ILN_2025
912			\|a GBV_ILN_2026
912			\|a GBV_ILN_2027
912			\|a GBV_ILN_2031
912			\|a GBV_ILN_2034
912			\|a GBV_ILN_2037
912			\|a GBV_ILN_2038
912			\|a GBV_ILN_2039
912			\|a GBV_ILN_2044
912			\|a GBV_ILN_2048
912			\|a GBV_ILN_2049
912			\|a GBV_ILN_2050
912			\|a GBV_ILN_2055
912			\|a GBV_ILN_2056
912			\|a GBV_ILN_2057
912			\|a GBV_ILN_2059
912			\|a GBV_ILN_2061
912			\|a GBV_ILN_2064
912			\|a GBV_ILN_2065
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912			\|a GBV_ILN_2088
912			\|a GBV_ILN_2093
912			\|a GBV_ILN_2106
912			\|a GBV_ILN_2107
912			\|a GBV_ILN_2108
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912			\|a GBV_ILN_2111
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912			\|a GBV_ILN_2472
912			\|a GBV_ILN_2507
912			\|a GBV_ILN_2522
912			\|a GBV_ILN_2548
912			\|a GBV_ILN_4035
912			\|a GBV_ILN_4037
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912			\|a GBV_ILN_4112
912			\|a GBV_ILN_4125
912			\|a GBV_ILN_4126
912			\|a GBV_ILN_4242
912			\|a GBV_ILN_4246
912			\|a GBV_ILN_4249
912			\|a GBV_ILN_4251
912			\|a GBV_ILN_4305
912			\|a GBV_ILN_4306
912			\|a GBV_ILN_4307
912			\|a GBV_ILN_4313
912			\|a GBV_ILN_4322
912			\|a GBV_ILN_4323
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allfields	10.1134/S1063739723600358 doi (DE-627)SPR055252656 (SPR)S1063739723600358-e DE-627 ger DE-627 rakwb eng 620 VZ 53.00 bkl Kudrya, V. P. verfasserin aut Some Properties of Argon as an Actinometric Atom. II. Metastable Levels Quenching 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Pleiades Publishing, Ltd. 2023. ISSN 1063-7397, Russian Microelectronics, 2023, Vol. 52, Suppl. 1, pp. S290–S298. © Pleiades Publishing, Ltd., 2023. Abstract Argon metastable levels quenching rate constant data are collected and analyzed from about 30 experimental studies. The main attention is paid to molecules that are used in plasma-chemical processes in microelectronics. All data are presented in detailed tables. They correspond to room temperature. The results obtained can be useful in developing models of the actinometric method for diagnosing low-temperature low-pressure plasma, as well as models of low-pressure discharges in argon-containing mixtures. Enthalten in Russian microelectronics Pleiades Publishing, 2000 52(2023), Suppl 1 vom: Dez., Seite S290-S298 (DE-627)334714338 (DE-600)2058225-0 1608-3415 nnns volume:52 year:2023 number:Suppl 1 month:12 pages:S290-S298 https://dx.doi.org/10.1134/S1063739723600358 lizenzpflichtig Volltext SYSFLAG_0 GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.00 VZ AR 52 2023 Suppl 1 12 S290-S298
spelling	10.1134/S1063739723600358 doi (DE-627)SPR055252656 (SPR)S1063739723600358-e DE-627 ger DE-627 rakwb eng 620 VZ 53.00 bkl Kudrya, V. P. verfasserin aut Some Properties of Argon as an Actinometric Atom. II. Metastable Levels Quenching 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Pleiades Publishing, Ltd. 2023. ISSN 1063-7397, Russian Microelectronics, 2023, Vol. 52, Suppl. 1, pp. S290–S298. © Pleiades Publishing, Ltd., 2023. Abstract Argon metastable levels quenching rate constant data are collected and analyzed from about 30 experimental studies. The main attention is paid to molecules that are used in plasma-chemical processes in microelectronics. All data are presented in detailed tables. They correspond to room temperature. The results obtained can be useful in developing models of the actinometric method for diagnosing low-temperature low-pressure plasma, as well as models of low-pressure discharges in argon-containing mixtures. Enthalten in Russian microelectronics Pleiades Publishing, 2000 52(2023), Suppl 1 vom: Dez., Seite S290-S298 (DE-627)334714338 (DE-600)2058225-0 1608-3415 nnns volume:52 year:2023 number:Suppl 1 month:12 pages:S290-S298 https://dx.doi.org/10.1134/S1063739723600358 lizenzpflichtig Volltext SYSFLAG_0 GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.00 VZ AR 52 2023 Suppl 1 12 S290-S298
allfields_unstemmed	10.1134/S1063739723600358 doi (DE-627)SPR055252656 (SPR)S1063739723600358-e DE-627 ger DE-627 rakwb eng 620 VZ 53.00 bkl Kudrya, V. P. verfasserin aut Some Properties of Argon as an Actinometric Atom. II. Metastable Levels Quenching 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Pleiades Publishing, Ltd. 2023. ISSN 1063-7397, Russian Microelectronics, 2023, Vol. 52, Suppl. 1, pp. S290–S298. © Pleiades Publishing, Ltd., 2023. Abstract Argon metastable levels quenching rate constant data are collected and analyzed from about 30 experimental studies. The main attention is paid to molecules that are used in plasma-chemical processes in microelectronics. All data are presented in detailed tables. They correspond to room temperature. The results obtained can be useful in developing models of the actinometric method for diagnosing low-temperature low-pressure plasma, as well as models of low-pressure discharges in argon-containing mixtures. Enthalten in Russian microelectronics Pleiades Publishing, 2000 52(2023), Suppl 1 vom: Dez., Seite S290-S298 (DE-627)334714338 (DE-600)2058225-0 1608-3415 nnns volume:52 year:2023 number:Suppl 1 month:12 pages:S290-S298 https://dx.doi.org/10.1134/S1063739723600358 lizenzpflichtig Volltext SYSFLAG_0 GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.00 VZ AR 52 2023 Suppl 1 12 S290-S298
allfieldsGer	10.1134/S1063739723600358 doi (DE-627)SPR055252656 (SPR)S1063739723600358-e DE-627 ger DE-627 rakwb eng 620 VZ 53.00 bkl Kudrya, V. P. verfasserin aut Some Properties of Argon as an Actinometric Atom. II. Metastable Levels Quenching 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Pleiades Publishing, Ltd. 2023. ISSN 1063-7397, Russian Microelectronics, 2023, Vol. 52, Suppl. 1, pp. S290–S298. © Pleiades Publishing, Ltd., 2023. Abstract Argon metastable levels quenching rate constant data are collected and analyzed from about 30 experimental studies. The main attention is paid to molecules that are used in plasma-chemical processes in microelectronics. All data are presented in detailed tables. They correspond to room temperature. The results obtained can be useful in developing models of the actinometric method for diagnosing low-temperature low-pressure plasma, as well as models of low-pressure discharges in argon-containing mixtures. Enthalten in Russian microelectronics Pleiades Publishing, 2000 52(2023), Suppl 1 vom: Dez., Seite S290-S298 (DE-627)334714338 (DE-600)2058225-0 1608-3415 nnns volume:52 year:2023 number:Suppl 1 month:12 pages:S290-S298 https://dx.doi.org/10.1134/S1063739723600358 lizenzpflichtig Volltext SYSFLAG_0 GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.00 VZ AR 52 2023 Suppl 1 12 S290-S298
allfieldsSound	10.1134/S1063739723600358 doi (DE-627)SPR055252656 (SPR)S1063739723600358-e DE-627 ger DE-627 rakwb eng 620 VZ 53.00 bkl Kudrya, V. P. verfasserin aut Some Properties of Argon as an Actinometric Atom. II. Metastable Levels Quenching 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Pleiades Publishing, Ltd. 2023. ISSN 1063-7397, Russian Microelectronics, 2023, Vol. 52, Suppl. 1, pp. S290–S298. © Pleiades Publishing, Ltd., 2023. Abstract Argon metastable levels quenching rate constant data are collected and analyzed from about 30 experimental studies. The main attention is paid to molecules that are used in plasma-chemical processes in microelectronics. All data are presented in detailed tables. They correspond to room temperature. The results obtained can be useful in developing models of the actinometric method for diagnosing low-temperature low-pressure plasma, as well as models of low-pressure discharges in argon-containing mixtures. Enthalten in Russian microelectronics Pleiades Publishing, 2000 52(2023), Suppl 1 vom: Dez., Seite S290-S298 (DE-627)334714338 (DE-600)2058225-0 1608-3415 nnns volume:52 year:2023 number:Suppl 1 month:12 pages:S290-S298 https://dx.doi.org/10.1134/S1063739723600358 lizenzpflichtig Volltext SYSFLAG_0 GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.00 VZ AR 52 2023 Suppl 1 12 S290-S298
language	English
source	Enthalten in Russian microelectronics 52(2023), Suppl 1 vom: Dez., Seite S290-S298 volume:52 year:2023 number:Suppl 1 month:12 pages:S290-S298
sourceStr	Enthalten in Russian microelectronics 52(2023), Suppl 1 vom: Dez., Seite S290-S298 volume:52 year:2023 number:Suppl 1 month:12 pages:S290-S298
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container_title	Russian microelectronics
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publishDateDaySort_date	2023-12-01T00:00:00Z
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author	Kudrya, V. P.
spellingShingle	Kudrya, V. P. ddc 620 bkl 53.00 Some Properties of Argon as an Actinometric Atom. II. Metastable Levels Quenching
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topic_title	620 VZ 53.00 bkl Some Properties of Argon as an Actinometric Atom. II. Metastable Levels Quenching
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title	Some Properties of Argon as an Actinometric Atom. II. Metastable Levels Quenching
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title_full	Some Properties of Argon as an Actinometric Atom. II. Metastable Levels Quenching
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title_sort	some properties of argon as an actinometric atom. ii. metastable levels quenching
title_auth	Some Properties of Argon as an Actinometric Atom. II. Metastable Levels Quenching
abstract	Abstract Argon metastable levels quenching rate constant data are collected and analyzed from about 30 experimental studies. The main attention is paid to molecules that are used in plasma-chemical processes in microelectronics. All data are presented in detailed tables. They correspond to room temperature. The results obtained can be useful in developing models of the actinometric method for diagnosing low-temperature low-pressure plasma, as well as models of low-pressure discharges in argon-containing mixtures. © Pleiades Publishing, Ltd. 2023. ISSN 1063-7397, Russian Microelectronics, 2023, Vol. 52, Suppl. 1, pp. S290–S298. © Pleiades Publishing, Ltd., 2023.
abstractGer	Abstract Argon metastable levels quenching rate constant data are collected and analyzed from about 30 experimental studies. The main attention is paid to molecules that are used in plasma-chemical processes in microelectronics. All data are presented in detailed tables. They correspond to room temperature. The results obtained can be useful in developing models of the actinometric method for diagnosing low-temperature low-pressure plasma, as well as models of low-pressure discharges in argon-containing mixtures. © Pleiades Publishing, Ltd. 2023. ISSN 1063-7397, Russian Microelectronics, 2023, Vol. 52, Suppl. 1, pp. S290–S298. © Pleiades Publishing, Ltd., 2023.
abstract_unstemmed	Abstract Argon metastable levels quenching rate constant data are collected and analyzed from about 30 experimental studies. The main attention is paid to molecules that are used in plasma-chemical processes in microelectronics. All data are presented in detailed tables. They correspond to room temperature. The results obtained can be useful in developing models of the actinometric method for diagnosing low-temperature low-pressure plasma, as well as models of low-pressure discharges in argon-containing mixtures. © Pleiades Publishing, Ltd. 2023. ISSN 1063-7397, Russian Microelectronics, 2023, Vol. 52, Suppl. 1, pp. S290–S298. © Pleiades Publishing, Ltd., 2023.
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title_short	Some Properties of Argon as an Actinometric Atom. II. Metastable Levels Quenching
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up_date	2024-07-03T14:22:29.558Z
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