Experimental investigation of time dependent dielectric breakdown and failure mechanism for Hf

The experimental investigation of the time dependent dielectric breakdown (TDDB) was performed to study the dielectric breakdown mechanisms for Hf0.5Zr0.5O2 (HZO) ferroelectric field-effect transistors (FeFETs) with the SiO2 interfacial layer (IL). Constant voltage stress method combined with the TC...
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Autor*in:	Cheng, Ran [verfasserIn] Li, Xinze [verfasserIn] Zeng, Yiqin [verfasserIn] Yu, Xiao [verfasserIn] Peng, Yue [verfasserIn] Chen, Bing [verfasserIn] Han, Genquan [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2023

Schlagwörter:	TDDB Interfacial oxide layer Ferroelectric field effect transistor (FeFET) Memory window

Übergeordnetes Werk:	Enthalten in: Solid state electronics - Oxford [u.a.] : Pergamon, Elsevier Science, 1960, 205
Übergeordnetes Werk:	volume:205

DOI / URN:	10.1016/j.sse.2023.108657

Katalog-ID:	ELV009936092

Internformat


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245	1	0	\|a Experimental investigation of time dependent dielectric breakdown and failure mechanism for Hf
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520			\|a The experimental investigation of the time dependent dielectric breakdown (TDDB) was performed to study the dielectric breakdown mechanisms for Hf0.5Zr0.5O2 (HZO) ferroelectric field-effect transistors (FeFETs) with the SiO2 interfacial layer (IL). Constant voltage stress method combined with the TCAD device simulation was used to study the breakdown mechanism of the TaN/HZO/SiO2/Si gate stack. Due to the much higher electric field in the IL, the breakdown of the SiO2 IL is the major reason for the breakdown of the gate stack. In addition, it is found that the IL breakdown will speed up the disappearance of the memory window (MW), leading to the malfunction of the FeFET as a storage device. Finally, the Weibull distributions of time-to-breakdown ( T BD ) and charge-to-breakdown ( Q BD ) were characterized, revealing decent TDDB performance of the FeFETs. Careful design of IL thickness is necessary to balance the tradeoff between the device performance and the reliability lifetime of HZO FeFETs.
650		4	\|a TDDB
650		4	\|a Interfacial oxide layer
650		4	\|a Ferroelectric field effect transistor (FeFET)
650		4	\|a Memory window
700	1		\|a Li, Xinze \|e verfasserin \|4 aut
700	1		\|a Zeng, Yiqin \|e verfasserin \|0 (orcid)0000-0002-8154-5939 \|4 aut
700	1		\|a Yu, Xiao \|e verfasserin \|0 (orcid)0000-0001-8769-521X \|4 aut
700	1		\|a Peng, Yue \|e verfasserin \|4 aut
700	1		\|a Chen, Bing \|e verfasserin \|4 aut
700	1		\|a Han, Genquan \|e verfasserin \|4 aut
773	0	8	\|i Enthalten in \|t Solid state electronics \|d Oxford [u.a.] : Pergamon, Elsevier Science, 1960 \|g 205 \|h Online-Ressource \|w (DE-627)32050591X \|w (DE-600)2012825-3 \|w (DE-576)098474189 \|7 nnns
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936	b	k	\|a 53.52 \|j Elektronische Schaltungen \|q VZ
951			\|a AR
952			\|d 205

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publishDate	2023
allfields	10.1016/j.sse.2023.108657 doi (DE-627)ELV009936092 (ELSEVIER)S0038-1101(23)00070-9 DE-627 ger DE-627 rda eng 530 620 VZ 33.72 bkl 33.61 bkl 53.56 bkl 53.52 bkl Cheng, Ran verfasserin aut Experimental investigation of time dependent dielectric breakdown and failure mechanism for Hf 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The experimental investigation of the time dependent dielectric breakdown (TDDB) was performed to study the dielectric breakdown mechanisms for Hf0.5Zr0.5O2 (HZO) ferroelectric field-effect transistors (FeFETs) with the SiO2 interfacial layer (IL). Constant voltage stress method combined with the TCAD device simulation was used to study the breakdown mechanism of the TaN/HZO/SiO2/Si gate stack. Due to the much higher electric field in the IL, the breakdown of the SiO2 IL is the major reason for the breakdown of the gate stack. In addition, it is found that the IL breakdown will speed up the disappearance of the memory window (MW), leading to the malfunction of the FeFET as a storage device. Finally, the Weibull distributions of time-to-breakdown ( T BD ) and charge-to-breakdown ( Q BD ) were characterized, revealing decent TDDB performance of the FeFETs. Careful design of IL thickness is necessary to balance the tradeoff between the device performance and the reliability lifetime of HZO FeFETs. TDDB Interfacial oxide layer Ferroelectric field effect transistor (FeFET) Memory window Li, Xinze verfasserin aut Zeng, Yiqin verfasserin (orcid)0000-0002-8154-5939 aut Yu, Xiao verfasserin (orcid)0000-0001-8769-521X aut Peng, Yue verfasserin aut Chen, Bing verfasserin aut Han, Genquan verfasserin aut Enthalten in Solid state electronics Oxford [u.a.] : Pergamon, Elsevier Science, 1960 205 Online-Ressource (DE-627)32050591X (DE-600)2012825-3 (DE-576)098474189 nnns volume:205 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.72 Halbleiterphysik VZ 33.61 Festkörperphysik VZ 53.56 Halbleitertechnologie VZ 53.52 Elektronische Schaltungen VZ AR 205
spelling	10.1016/j.sse.2023.108657 doi (DE-627)ELV009936092 (ELSEVIER)S0038-1101(23)00070-9 DE-627 ger DE-627 rda eng 530 620 VZ 33.72 bkl 33.61 bkl 53.56 bkl 53.52 bkl Cheng, Ran verfasserin aut Experimental investigation of time dependent dielectric breakdown and failure mechanism for Hf 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The experimental investigation of the time dependent dielectric breakdown (TDDB) was performed to study the dielectric breakdown mechanisms for Hf0.5Zr0.5O2 (HZO) ferroelectric field-effect transistors (FeFETs) with the SiO2 interfacial layer (IL). Constant voltage stress method combined with the TCAD device simulation was used to study the breakdown mechanism of the TaN/HZO/SiO2/Si gate stack. Due to the much higher electric field in the IL, the breakdown of the SiO2 IL is the major reason for the breakdown of the gate stack. In addition, it is found that the IL breakdown will speed up the disappearance of the memory window (MW), leading to the malfunction of the FeFET as a storage device. Finally, the Weibull distributions of time-to-breakdown ( T BD ) and charge-to-breakdown ( Q BD ) were characterized, revealing decent TDDB performance of the FeFETs. Careful design of IL thickness is necessary to balance the tradeoff between the device performance and the reliability lifetime of HZO FeFETs. TDDB Interfacial oxide layer Ferroelectric field effect transistor (FeFET) Memory window Li, Xinze verfasserin aut Zeng, Yiqin verfasserin (orcid)0000-0002-8154-5939 aut Yu, Xiao verfasserin (orcid)0000-0001-8769-521X aut Peng, Yue verfasserin aut Chen, Bing verfasserin aut Han, Genquan verfasserin aut Enthalten in Solid state electronics Oxford [u.a.] : Pergamon, Elsevier Science, 1960 205 Online-Ressource (DE-627)32050591X (DE-600)2012825-3 (DE-576)098474189 nnns volume:205 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.72 Halbleiterphysik VZ 33.61 Festkörperphysik VZ 53.56 Halbleitertechnologie VZ 53.52 Elektronische Schaltungen VZ AR 205
allfields_unstemmed	10.1016/j.sse.2023.108657 doi (DE-627)ELV009936092 (ELSEVIER)S0038-1101(23)00070-9 DE-627 ger DE-627 rda eng 530 620 VZ 33.72 bkl 33.61 bkl 53.56 bkl 53.52 bkl Cheng, Ran verfasserin aut Experimental investigation of time dependent dielectric breakdown and failure mechanism for Hf 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The experimental investigation of the time dependent dielectric breakdown (TDDB) was performed to study the dielectric breakdown mechanisms for Hf0.5Zr0.5O2 (HZO) ferroelectric field-effect transistors (FeFETs) with the SiO2 interfacial layer (IL). Constant voltage stress method combined with the TCAD device simulation was used to study the breakdown mechanism of the TaN/HZO/SiO2/Si gate stack. Due to the much higher electric field in the IL, the breakdown of the SiO2 IL is the major reason for the breakdown of the gate stack. In addition, it is found that the IL breakdown will speed up the disappearance of the memory window (MW), leading to the malfunction of the FeFET as a storage device. Finally, the Weibull distributions of time-to-breakdown ( T BD ) and charge-to-breakdown ( Q BD ) were characterized, revealing decent TDDB performance of the FeFETs. Careful design of IL thickness is necessary to balance the tradeoff between the device performance and the reliability lifetime of HZO FeFETs. TDDB Interfacial oxide layer Ferroelectric field effect transistor (FeFET) Memory window Li, Xinze verfasserin aut Zeng, Yiqin verfasserin (orcid)0000-0002-8154-5939 aut Yu, Xiao verfasserin (orcid)0000-0001-8769-521X aut Peng, Yue verfasserin aut Chen, Bing verfasserin aut Han, Genquan verfasserin aut Enthalten in Solid state electronics Oxford [u.a.] : Pergamon, Elsevier Science, 1960 205 Online-Ressource (DE-627)32050591X (DE-600)2012825-3 (DE-576)098474189 nnns volume:205 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.72 Halbleiterphysik VZ 33.61 Festkörperphysik VZ 53.56 Halbleitertechnologie VZ 53.52 Elektronische Schaltungen VZ AR 205
allfieldsGer	10.1016/j.sse.2023.108657 doi (DE-627)ELV009936092 (ELSEVIER)S0038-1101(23)00070-9 DE-627 ger DE-627 rda eng 530 620 VZ 33.72 bkl 33.61 bkl 53.56 bkl 53.52 bkl Cheng, Ran verfasserin aut Experimental investigation of time dependent dielectric breakdown and failure mechanism for Hf 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The experimental investigation of the time dependent dielectric breakdown (TDDB) was performed to study the dielectric breakdown mechanisms for Hf0.5Zr0.5O2 (HZO) ferroelectric field-effect transistors (FeFETs) with the SiO2 interfacial layer (IL). Constant voltage stress method combined with the TCAD device simulation was used to study the breakdown mechanism of the TaN/HZO/SiO2/Si gate stack. Due to the much higher electric field in the IL, the breakdown of the SiO2 IL is the major reason for the breakdown of the gate stack. In addition, it is found that the IL breakdown will speed up the disappearance of the memory window (MW), leading to the malfunction of the FeFET as a storage device. Finally, the Weibull distributions of time-to-breakdown ( T BD ) and charge-to-breakdown ( Q BD ) were characterized, revealing decent TDDB performance of the FeFETs. Careful design of IL thickness is necessary to balance the tradeoff between the device performance and the reliability lifetime of HZO FeFETs. TDDB Interfacial oxide layer Ferroelectric field effect transistor (FeFET) Memory window Li, Xinze verfasserin aut Zeng, Yiqin verfasserin (orcid)0000-0002-8154-5939 aut Yu, Xiao verfasserin (orcid)0000-0001-8769-521X aut Peng, Yue verfasserin aut Chen, Bing verfasserin aut Han, Genquan verfasserin aut Enthalten in Solid state electronics Oxford [u.a.] : Pergamon, Elsevier Science, 1960 205 Online-Ressource (DE-627)32050591X (DE-600)2012825-3 (DE-576)098474189 nnns volume:205 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.72 Halbleiterphysik VZ 33.61 Festkörperphysik VZ 53.56 Halbleitertechnologie VZ 53.52 Elektronische Schaltungen VZ AR 205
allfieldsSound	10.1016/j.sse.2023.108657 doi (DE-627)ELV009936092 (ELSEVIER)S0038-1101(23)00070-9 DE-627 ger DE-627 rda eng 530 620 VZ 33.72 bkl 33.61 bkl 53.56 bkl 53.52 bkl Cheng, Ran verfasserin aut Experimental investigation of time dependent dielectric breakdown and failure mechanism for Hf 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The experimental investigation of the time dependent dielectric breakdown (TDDB) was performed to study the dielectric breakdown mechanisms for Hf0.5Zr0.5O2 (HZO) ferroelectric field-effect transistors (FeFETs) with the SiO2 interfacial layer (IL). Constant voltage stress method combined with the TCAD device simulation was used to study the breakdown mechanism of the TaN/HZO/SiO2/Si gate stack. Due to the much higher electric field in the IL, the breakdown of the SiO2 IL is the major reason for the breakdown of the gate stack. In addition, it is found that the IL breakdown will speed up the disappearance of the memory window (MW), leading to the malfunction of the FeFET as a storage device. Finally, the Weibull distributions of time-to-breakdown ( T BD ) and charge-to-breakdown ( Q BD ) were characterized, revealing decent TDDB performance of the FeFETs. Careful design of IL thickness is necessary to balance the tradeoff between the device performance and the reliability lifetime of HZO FeFETs. TDDB Interfacial oxide layer Ferroelectric field effect transistor (FeFET) Memory window Li, Xinze verfasserin aut Zeng, Yiqin verfasserin (orcid)0000-0002-8154-5939 aut Yu, Xiao verfasserin (orcid)0000-0001-8769-521X aut Peng, Yue verfasserin aut Chen, Bing verfasserin aut Han, Genquan verfasserin aut Enthalten in Solid state electronics Oxford [u.a.] : Pergamon, Elsevier Science, 1960 205 Online-Ressource (DE-627)32050591X (DE-600)2012825-3 (DE-576)098474189 nnns volume:205 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.72 Halbleiterphysik VZ 33.61 Festkörperphysik VZ 53.56 Halbleitertechnologie VZ 53.52 Elektronische Schaltungen VZ AR 205
language	English
source	Enthalten in Solid state electronics 205 volume:205
sourceStr	Enthalten in Solid state electronics 205 volume:205
format_phy_str_mv	Article
bklname	Halbleiterphysik Festkörperphysik Halbleitertechnologie Elektronische Schaltungen
institution	findex.gbv.de
topic_facet	TDDB Interfacial oxide layer Ferroelectric field effect transistor (FeFET) Memory window
dewey-raw	530
isfreeaccess_bool	false
container_title	Solid state electronics
authorswithroles_txt_mv	Cheng, Ran @@aut@@ Li, Xinze @@aut@@ Zeng, Yiqin @@aut@@ Yu, Xiao @@aut@@ Peng, Yue @@aut@@ Chen, Bing @@aut@@ Han, Genquan @@aut@@
publishDateDaySort_date	2023-01-01T00:00:00Z
hierarchy_top_id	32050591X
dewey-sort	3530
id	ELV009936092
language_de	englisch
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author	Cheng, Ran
spellingShingle	Cheng, Ran ddc 530 bkl 33.72 bkl 33.61 bkl 53.56 bkl 53.52 misc TDDB misc Interfacial oxide layer misc Ferroelectric field effect transistor (FeFET) misc Memory window Experimental investigation of time dependent dielectric breakdown and failure mechanism for Hf
authorStr	Cheng, Ran
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topic_title	530 620 VZ 33.72 bkl 33.61 bkl 53.56 bkl 53.52 bkl Experimental investigation of time dependent dielectric breakdown and failure mechanism for Hf TDDB Interfacial oxide layer Ferroelectric field effect transistor (FeFET) Memory window
topic	ddc 530 bkl 33.72 bkl 33.61 bkl 53.56 bkl 53.52 misc TDDB misc Interfacial oxide layer misc Ferroelectric field effect transistor (FeFET) misc Memory window
topic_unstemmed	ddc 530 bkl 33.72 bkl 33.61 bkl 53.56 bkl 53.52 misc TDDB misc Interfacial oxide layer misc Ferroelectric field effect transistor (FeFET) misc Memory window
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title	Experimental investigation of time dependent dielectric breakdown and failure mechanism for Hf
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title_full	Experimental investigation of time dependent dielectric breakdown and failure mechanism for Hf
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author_browse	Cheng, Ran Li, Xinze Zeng, Yiqin Yu, Xiao Peng, Yue Chen, Bing Han, Genquan
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author-letter	Cheng, Ran
doi_str_mv	10.1016/j.sse.2023.108657
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title_sort	experimental investigation of time dependent dielectric breakdown and failure mechanism for hf
title_auth	Experimental investigation of time dependent dielectric breakdown and failure mechanism for Hf
abstract	The experimental investigation of the time dependent dielectric breakdown (TDDB) was performed to study the dielectric breakdown mechanisms for Hf0.5Zr0.5O2 (HZO) ferroelectric field-effect transistors (FeFETs) with the SiO2 interfacial layer (IL). Constant voltage stress method combined with the TCAD device simulation was used to study the breakdown mechanism of the TaN/HZO/SiO2/Si gate stack. Due to the much higher electric field in the IL, the breakdown of the SiO2 IL is the major reason for the breakdown of the gate stack. In addition, it is found that the IL breakdown will speed up the disappearance of the memory window (MW), leading to the malfunction of the FeFET as a storage device. Finally, the Weibull distributions of time-to-breakdown ( T BD ) and charge-to-breakdown ( Q BD ) were characterized, revealing decent TDDB performance of the FeFETs. Careful design of IL thickness is necessary to balance the tradeoff between the device performance and the reliability lifetime of HZO FeFETs.
abstractGer	The experimental investigation of the time dependent dielectric breakdown (TDDB) was performed to study the dielectric breakdown mechanisms for Hf0.5Zr0.5O2 (HZO) ferroelectric field-effect transistors (FeFETs) with the SiO2 interfacial layer (IL). Constant voltage stress method combined with the TCAD device simulation was used to study the breakdown mechanism of the TaN/HZO/SiO2/Si gate stack. Due to the much higher electric field in the IL, the breakdown of the SiO2 IL is the major reason for the breakdown of the gate stack. In addition, it is found that the IL breakdown will speed up the disappearance of the memory window (MW), leading to the malfunction of the FeFET as a storage device. Finally, the Weibull distributions of time-to-breakdown ( T BD ) and charge-to-breakdown ( Q BD ) were characterized, revealing decent TDDB performance of the FeFETs. Careful design of IL thickness is necessary to balance the tradeoff between the device performance and the reliability lifetime of HZO FeFETs.
abstract_unstemmed	The experimental investigation of the time dependent dielectric breakdown (TDDB) was performed to study the dielectric breakdown mechanisms for Hf0.5Zr0.5O2 (HZO) ferroelectric field-effect transistors (FeFETs) with the SiO2 interfacial layer (IL). Constant voltage stress method combined with the TCAD device simulation was used to study the breakdown mechanism of the TaN/HZO/SiO2/Si gate stack. Due to the much higher electric field in the IL, the breakdown of the SiO2 IL is the major reason for the breakdown of the gate stack. In addition, it is found that the IL breakdown will speed up the disappearance of the memory window (MW), leading to the malfunction of the FeFET as a storage device. Finally, the Weibull distributions of time-to-breakdown ( T BD ) and charge-to-breakdown ( Q BD ) were characterized, revealing decent TDDB performance of the FeFETs. Careful design of IL thickness is necessary to balance the tradeoff between the device performance and the reliability lifetime of HZO FeFETs.
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title_short	Experimental investigation of time dependent dielectric breakdown and failure mechanism for Hf
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author2	Li, Xinze Zeng, Yiqin Yu, Xiao Peng, Yue Chen, Bing Han, Genquan
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doi_str	10.1016/j.sse.2023.108657
up_date	2024-07-07T00:51:58.076Z
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Experimental investigation of time dependent dielectric breakdown and failure mechanism for Hf

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