Three narrow band-gap semiconductors modified Z-scheme photocatalysts, Er<ce:sup loc="post">3+</ce:sup>:Y<ce:inf loc="post">3</ce:inf>Al<ce:inf loc="post">5</ce:inf>O<ce:inf loc="post">12</ce:inf>NiGa<ce:inf loc="post">2</ce:inf>O<ce:inf loc="post">4</ce:inf>/(NiS, CoS<ce:inf loc="post">2</ce:inf> or MoS<ce:inf loc="post">2</ce:inf>)/Bi<ce:inf loc="post">2</ce:inf>Sn<ce:inf loc="post">2</ce:inf>O<ce:inf loc="post">7</ce:inf>, for enhanced solar-light photocatalytic conversions of nitrite and sulfite
A narrow band-gap NiS semiconductor like “conductive ladder” is inserted between Er3+:Y3Al5O12NiGa2O4 and Bi2Sn2O7 to accelerate the electron transfer from conduction band of Bi2Sn2O7 to valence band of NiGa2O4. Er3+:Y3Al5O12 as an up-conversion luminescence agent (from visible-light to ultraviolet-...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Ma, Xue [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2018 |
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| Schlagwörter: |
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| Umfang: |
17 |
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| Übergeordnetes Werk: |
Enthalten in: Climate adaptive optimal design of an aerogel glazing system with the integration of a heuristic teaching-learning-based algorithm in machine learning-based optimization - Zhou, Yuekuan ELSEVIER, 2020, Seoul |
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| Übergeordnetes Werk: |
volume:66 ; year:2018 ; day:25 ; month:10 ; pages:141-157 ; extent:17 |
| Links: |
|---|
| DOI / URN: |
10.1016/j.jiec.2018.05.024 |
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| Katalog-ID: |
ELV044058543 |
|---|
| LEADER | 01000caa a22002652 4500 | ||
|---|---|---|---|
| 001 | ELV044058543 | ||
| 003 | DE-627 | ||
| 005 | 20230624105929.0 | ||
| 007 | cr uuu---uuuuu | ||
| 008 | 181113s2018 xx |||||o 00| ||eng c | ||
| 024 | 7 | |a 10.1016/j.jiec.2018.05.024 |2 doi | |
| 028 | 5 | 2 | |a GBV00000000000359.pica |
| 035 | |a (DE-627)ELV044058543 | ||
| 035 | |a (ELSEVIER)S1226-086X(18)30253-3 | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 082 | 0 | 4 | |a 530 |a 620 |q VZ |
| 084 | |a 52.56 |2 bkl | ||
| 100 | 1 | |a Ma, Xue |e verfasserin |4 aut | |
| 245 | 1 | 6 | |a Three narrow band-gap semiconductors modified Z-scheme photocatalysts, Er<ce:sup loc="post">3+</ce:sup>:Y<ce:inf loc="post">3</ce:inf>Al<ce:inf loc="post">5</ce:inf>O<ce:inf loc="post">12</ce:inf>NiGa<ce:inf loc="post">2</ce:inf>O<ce:inf loc="post">4</ce:inf>/(NiS, CoS<ce:inf loc="post">2</ce:inf> or MoS<ce:inf loc="post">2</ce:inf>)/Bi<ce:inf loc="post">2</ce:inf>Sn<ce:inf loc="post">2</ce:inf>O<ce:inf loc="post">7</ce:inf>, for enhanced solar-light photocatalytic conversions of nitrite and sulfite |
| 264 | 1 | |c 2018 | |
| 300 | |a 17 | ||
| 336 | |a nicht spezifiziert |b zzz |2 rdacontent | ||
| 337 | |a nicht spezifiziert |b z |2 rdamedia | ||
| 338 | |a nicht spezifiziert |b zu |2 rdacarrier | ||
| 520 | |a A narrow band-gap NiS semiconductor like “conductive ladder” is inserted between Er3+:Y3Al5O12NiGa2O4 and Bi2Sn2O7 to accelerate the electron transfer from conduction band of Bi2Sn2O7 to valence band of NiGa2O4. Er3+:Y3Al5O12 as an up-conversion luminescence agent (from visible-light to ultraviolet-light) provides enough ultraviolet-light for satisfying the energy demand of wide band-gap NiGa2O4. The prepared Z-scheme Er3+:Y3Al5O12@NiGa2O4/NiS/Bi2Sn2O7 composite exhibits a high and stable photocatalytic activity during conversions of nitrite and sulfite. | ||
| 650 | 7 | |a Z-scheme photocatalyst |2 Elsevier | |
| 650 | 7 | |a Sulfite |2 Elsevier | |
| 650 | 7 | |a Narrow band-gap semiconductor |2 Elsevier | |
| 650 | 7 | |a Nitrite |2 Elsevier | |
| 650 | 7 | |a Solar-light photocatalytic conversion |2 Elsevier | |
| 700 | 1 | |a Wang, Chunquan |4 oth | |
| 700 | 1 | |a Wang, Guowei |4 oth | |
| 700 | 1 | |a Li, Guanshu |4 oth | |
| 700 | 1 | |a Li, Siyi |4 oth | |
| 700 | 1 | |a Wang, Jun |4 oth | |
| 700 | 1 | |a Song, Youtao |4 oth | |
| 773 | 0 | 8 | |i Enthalten in |n KSIEC |a Zhou, Yuekuan ELSEVIER |t Climate adaptive optimal design of an aerogel glazing system with the integration of a heuristic teaching-learning-based algorithm in machine learning-based optimization |d 2020 |g Seoul |w (DE-627)ELV003898202 |
| 773 | 1 | 8 | |g volume:66 |g year:2018 |g day:25 |g month:10 |g pages:141-157 |g extent:17 |
| 856 | 4 | 0 | |u https://doi.org/10.1016/j.jiec.2018.05.024 |3 Volltext |
| 912 | |a GBV_USEFLAG_U | ||
| 912 | |a GBV_ELV | ||
| 912 | |a SYSFLAG_U | ||
| 936 | b | k | |a 52.56 |j Regenerative Energieformen |j alternative Energieformen |q VZ |
| 951 | |a AR | ||
| 952 | |d 66 |j 2018 |b 25 |c 1025 |h 141-157 |g 17 | ||
| author_variant |
x m xm |
|---|---|
| matchkey_str |
maxuewangchunquanwangguoweiliguanshulisi:2018----:henrobngpeiodcosoiidshmpooaaytecspops3euyenlcotciflenlcotcifcifops1cifiaenlcotcifcifops4ennsocifops2enomsenlcotcifienlcotcifnenlcotc |
| hierarchy_sort_str |
2018 |
| bklnumber |
52.56 |
| publishDate |
2018 |
| allfields |
10.1016/j.jiec.2018.05.024 doi GBV00000000000359.pica (DE-627)ELV044058543 (ELSEVIER)S1226-086X(18)30253-3 DE-627 ger DE-627 rakwb eng 530 620 VZ 52.56 bkl Ma, Xue verfasserin aut Three narrow band-gap semiconductors modified Z-scheme photocatalysts, Er<ce:sup loc="post">3+</ce:sup>:Y<ce:inf loc="post">3</ce:inf>Al<ce:inf loc="post">5</ce:inf>O<ce:inf loc="post">12</ce:inf>NiGa<ce:inf loc="post">2</ce:inf>O<ce:inf loc="post">4</ce:inf>/(NiS, CoS<ce:inf loc="post">2</ce:inf> or MoS<ce:inf loc="post">2</ce:inf>)/Bi<ce:inf loc="post">2</ce:inf>Sn<ce:inf loc="post">2</ce:inf>O<ce:inf loc="post">7</ce:inf>, for enhanced solar-light photocatalytic conversions of nitrite and sulfite 2018 17 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier A narrow band-gap NiS semiconductor like “conductive ladder” is inserted between Er3+:Y3Al5O12NiGa2O4 and Bi2Sn2O7 to accelerate the electron transfer from conduction band of Bi2Sn2O7 to valence band of NiGa2O4. Er3+:Y3Al5O12 as an up-conversion luminescence agent (from visible-light to ultraviolet-light) provides enough ultraviolet-light for satisfying the energy demand of wide band-gap NiGa2O4. The prepared Z-scheme Er3+:Y3Al5O12@NiGa2O4/NiS/Bi2Sn2O7 composite exhibits a high and stable photocatalytic activity during conversions of nitrite and sulfite. Z-scheme photocatalyst Elsevier Sulfite Elsevier Narrow band-gap semiconductor Elsevier Nitrite Elsevier Solar-light photocatalytic conversion Elsevier Wang, Chunquan oth Wang, Guowei oth Li, Guanshu oth Li, Siyi oth Wang, Jun oth Song, Youtao oth Enthalten in KSIEC Zhou, Yuekuan ELSEVIER Climate adaptive optimal design of an aerogel glazing system with the integration of a heuristic teaching-learning-based algorithm in machine learning-based optimization 2020 Seoul (DE-627)ELV003898202 volume:66 year:2018 day:25 month:10 pages:141-157 extent:17 https://doi.org/10.1016/j.jiec.2018.05.024 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 52.56 Regenerative Energieformen alternative Energieformen VZ AR 66 2018 25 1025 141-157 17 |
| spelling |
10.1016/j.jiec.2018.05.024 doi GBV00000000000359.pica (DE-627)ELV044058543 (ELSEVIER)S1226-086X(18)30253-3 DE-627 ger DE-627 rakwb eng 530 620 VZ 52.56 bkl Ma, Xue verfasserin aut Three narrow band-gap semiconductors modified Z-scheme photocatalysts, Er<ce:sup loc="post">3+</ce:sup>:Y<ce:inf loc="post">3</ce:inf>Al<ce:inf loc="post">5</ce:inf>O<ce:inf loc="post">12</ce:inf>NiGa<ce:inf loc="post">2</ce:inf>O<ce:inf loc="post">4</ce:inf>/(NiS, CoS<ce:inf loc="post">2</ce:inf> or MoS<ce:inf loc="post">2</ce:inf>)/Bi<ce:inf loc="post">2</ce:inf>Sn<ce:inf loc="post">2</ce:inf>O<ce:inf loc="post">7</ce:inf>, for enhanced solar-light photocatalytic conversions of nitrite and sulfite 2018 17 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier A narrow band-gap NiS semiconductor like “conductive ladder” is inserted between Er3+:Y3Al5O12NiGa2O4 and Bi2Sn2O7 to accelerate the electron transfer from conduction band of Bi2Sn2O7 to valence band of NiGa2O4. Er3+:Y3Al5O12 as an up-conversion luminescence agent (from visible-light to ultraviolet-light) provides enough ultraviolet-light for satisfying the energy demand of wide band-gap NiGa2O4. The prepared Z-scheme Er3+:Y3Al5O12@NiGa2O4/NiS/Bi2Sn2O7 composite exhibits a high and stable photocatalytic activity during conversions of nitrite and sulfite. Z-scheme photocatalyst Elsevier Sulfite Elsevier Narrow band-gap semiconductor Elsevier Nitrite Elsevier Solar-light photocatalytic conversion Elsevier Wang, Chunquan oth Wang, Guowei oth Li, Guanshu oth Li, Siyi oth Wang, Jun oth Song, Youtao oth Enthalten in KSIEC Zhou, Yuekuan ELSEVIER Climate adaptive optimal design of an aerogel glazing system with the integration of a heuristic teaching-learning-based algorithm in machine learning-based optimization 2020 Seoul (DE-627)ELV003898202 volume:66 year:2018 day:25 month:10 pages:141-157 extent:17 https://doi.org/10.1016/j.jiec.2018.05.024 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 52.56 Regenerative Energieformen alternative Energieformen VZ AR 66 2018 25 1025 141-157 17 |
| allfields_unstemmed |
10.1016/j.jiec.2018.05.024 doi GBV00000000000359.pica (DE-627)ELV044058543 (ELSEVIER)S1226-086X(18)30253-3 DE-627 ger DE-627 rakwb eng 530 620 VZ 52.56 bkl Ma, Xue verfasserin aut Three narrow band-gap semiconductors modified Z-scheme photocatalysts, Er<ce:sup loc="post">3+</ce:sup>:Y<ce:inf loc="post">3</ce:inf>Al<ce:inf loc="post">5</ce:inf>O<ce:inf loc="post">12</ce:inf>NiGa<ce:inf loc="post">2</ce:inf>O<ce:inf loc="post">4</ce:inf>/(NiS, CoS<ce:inf loc="post">2</ce:inf> or MoS<ce:inf loc="post">2</ce:inf>)/Bi<ce:inf loc="post">2</ce:inf>Sn<ce:inf loc="post">2</ce:inf>O<ce:inf loc="post">7</ce:inf>, for enhanced solar-light photocatalytic conversions of nitrite and sulfite 2018 17 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier A narrow band-gap NiS semiconductor like “conductive ladder” is inserted between Er3+:Y3Al5O12NiGa2O4 and Bi2Sn2O7 to accelerate the electron transfer from conduction band of Bi2Sn2O7 to valence band of NiGa2O4. Er3+:Y3Al5O12 as an up-conversion luminescence agent (from visible-light to ultraviolet-light) provides enough ultraviolet-light for satisfying the energy demand of wide band-gap NiGa2O4. The prepared Z-scheme Er3+:Y3Al5O12@NiGa2O4/NiS/Bi2Sn2O7 composite exhibits a high and stable photocatalytic activity during conversions of nitrite and sulfite. Z-scheme photocatalyst Elsevier Sulfite Elsevier Narrow band-gap semiconductor Elsevier Nitrite Elsevier Solar-light photocatalytic conversion Elsevier Wang, Chunquan oth Wang, Guowei oth Li, Guanshu oth Li, Siyi oth Wang, Jun oth Song, Youtao oth Enthalten in KSIEC Zhou, Yuekuan ELSEVIER Climate adaptive optimal design of an aerogel glazing system with the integration of a heuristic teaching-learning-based algorithm in machine learning-based optimization 2020 Seoul (DE-627)ELV003898202 volume:66 year:2018 day:25 month:10 pages:141-157 extent:17 https://doi.org/10.1016/j.jiec.2018.05.024 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 52.56 Regenerative Energieformen alternative Energieformen VZ AR 66 2018 25 1025 141-157 17 |
| allfieldsGer |
10.1016/j.jiec.2018.05.024 doi GBV00000000000359.pica (DE-627)ELV044058543 (ELSEVIER)S1226-086X(18)30253-3 DE-627 ger DE-627 rakwb eng 530 620 VZ 52.56 bkl Ma, Xue verfasserin aut Three narrow band-gap semiconductors modified Z-scheme photocatalysts, Er<ce:sup loc="post">3+</ce:sup>:Y<ce:inf loc="post">3</ce:inf>Al<ce:inf loc="post">5</ce:inf>O<ce:inf loc="post">12</ce:inf>NiGa<ce:inf loc="post">2</ce:inf>O<ce:inf loc="post">4</ce:inf>/(NiS, CoS<ce:inf loc="post">2</ce:inf> or MoS<ce:inf loc="post">2</ce:inf>)/Bi<ce:inf loc="post">2</ce:inf>Sn<ce:inf loc="post">2</ce:inf>O<ce:inf loc="post">7</ce:inf>, for enhanced solar-light photocatalytic conversions of nitrite and sulfite 2018 17 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier A narrow band-gap NiS semiconductor like “conductive ladder” is inserted between Er3+:Y3Al5O12NiGa2O4 and Bi2Sn2O7 to accelerate the electron transfer from conduction band of Bi2Sn2O7 to valence band of NiGa2O4. Er3+:Y3Al5O12 as an up-conversion luminescence agent (from visible-light to ultraviolet-light) provides enough ultraviolet-light for satisfying the energy demand of wide band-gap NiGa2O4. The prepared Z-scheme Er3+:Y3Al5O12@NiGa2O4/NiS/Bi2Sn2O7 composite exhibits a high and stable photocatalytic activity during conversions of nitrite and sulfite. Z-scheme photocatalyst Elsevier Sulfite Elsevier Narrow band-gap semiconductor Elsevier Nitrite Elsevier Solar-light photocatalytic conversion Elsevier Wang, Chunquan oth Wang, Guowei oth Li, Guanshu oth Li, Siyi oth Wang, Jun oth Song, Youtao oth Enthalten in KSIEC Zhou, Yuekuan ELSEVIER Climate adaptive optimal design of an aerogel glazing system with the integration of a heuristic teaching-learning-based algorithm in machine learning-based optimization 2020 Seoul (DE-627)ELV003898202 volume:66 year:2018 day:25 month:10 pages:141-157 extent:17 https://doi.org/10.1016/j.jiec.2018.05.024 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 52.56 Regenerative Energieformen alternative Energieformen VZ AR 66 2018 25 1025 141-157 17 |
| allfieldsSound |
10.1016/j.jiec.2018.05.024 doi GBV00000000000359.pica (DE-627)ELV044058543 (ELSEVIER)S1226-086X(18)30253-3 DE-627 ger DE-627 rakwb eng 530 620 VZ 52.56 bkl Ma, Xue verfasserin aut Three narrow band-gap semiconductors modified Z-scheme photocatalysts, Er<ce:sup loc="post">3+</ce:sup>:Y<ce:inf loc="post">3</ce:inf>Al<ce:inf loc="post">5</ce:inf>O<ce:inf loc="post">12</ce:inf>NiGa<ce:inf loc="post">2</ce:inf>O<ce:inf loc="post">4</ce:inf>/(NiS, CoS<ce:inf loc="post">2</ce:inf> or MoS<ce:inf loc="post">2</ce:inf>)/Bi<ce:inf loc="post">2</ce:inf>Sn<ce:inf loc="post">2</ce:inf>O<ce:inf loc="post">7</ce:inf>, for enhanced solar-light photocatalytic conversions of nitrite and sulfite 2018 17 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier A narrow band-gap NiS semiconductor like “conductive ladder” is inserted between Er3+:Y3Al5O12NiGa2O4 and Bi2Sn2O7 to accelerate the electron transfer from conduction band of Bi2Sn2O7 to valence band of NiGa2O4. Er3+:Y3Al5O12 as an up-conversion luminescence agent (from visible-light to ultraviolet-light) provides enough ultraviolet-light for satisfying the energy demand of wide band-gap NiGa2O4. The prepared Z-scheme Er3+:Y3Al5O12@NiGa2O4/NiS/Bi2Sn2O7 composite exhibits a high and stable photocatalytic activity during conversions of nitrite and sulfite. Z-scheme photocatalyst Elsevier Sulfite Elsevier Narrow band-gap semiconductor Elsevier Nitrite Elsevier Solar-light photocatalytic conversion Elsevier Wang, Chunquan oth Wang, Guowei oth Li, Guanshu oth Li, Siyi oth Wang, Jun oth Song, Youtao oth Enthalten in KSIEC Zhou, Yuekuan ELSEVIER Climate adaptive optimal design of an aerogel glazing system with the integration of a heuristic teaching-learning-based algorithm in machine learning-based optimization 2020 Seoul (DE-627)ELV003898202 volume:66 year:2018 day:25 month:10 pages:141-157 extent:17 https://doi.org/10.1016/j.jiec.2018.05.024 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 52.56 Regenerative Energieformen alternative Energieformen VZ AR 66 2018 25 1025 141-157 17 |
| language |
English |
| source |
Enthalten in Climate adaptive optimal design of an aerogel glazing system with the integration of a heuristic teaching-learning-based algorithm in machine learning-based optimization Seoul volume:66 year:2018 day:25 month:10 pages:141-157 extent:17 |
| sourceStr |
Enthalten in Climate adaptive optimal design of an aerogel glazing system with the integration of a heuristic teaching-learning-based algorithm in machine learning-based optimization Seoul volume:66 year:2018 day:25 month:10 pages:141-157 extent:17 |
| format_phy_str_mv |
Article |
| bklname |
Regenerative Energieformen alternative Energieformen |
| institution |
findex.gbv.de |
| topic_facet |
Z-scheme photocatalyst Sulfite Narrow band-gap semiconductor Nitrite Solar-light photocatalytic conversion |
| dewey-raw |
530 |
| isfreeaccess_bool |
false |
| container_title |
Climate adaptive optimal design of an aerogel glazing system with the integration of a heuristic teaching-learning-based algorithm in machine learning-based optimization |
| authorswithroles_txt_mv |
Ma, Xue @@aut@@ Wang, Chunquan @@oth@@ Wang, Guowei @@oth@@ Li, Guanshu @@oth@@ Li, Siyi @@oth@@ Wang, Jun @@oth@@ Song, Youtao @@oth@@ |
| publishDateDaySort_date |
2018-01-25T00:00:00Z |
| hierarchy_top_id |
ELV003898202 |
| dewey-sort |
3530 |
| id |
ELV044058543 |
| language_de |
englisch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">ELV044058543</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230624105929.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">181113s2018 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.jiec.2018.05.024</subfield><subfield code="2">doi</subfield></datafield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">GBV00000000000359.pica</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)ELV044058543</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ELSEVIER)S1226-086X(18)30253-3</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="a">620</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">52.56</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Ma, Xue</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="6"><subfield code="a">Three narrow band-gap semiconductors modified Z-scheme photocatalysts, Er<ce:sup loc="post">3+</ce:sup>:Y<ce:inf loc="post">3</ce:inf>Al<ce:inf loc="post">5</ce:inf>O<ce:inf loc="post">12</ce:inf>NiGa<ce:inf loc="post">2</ce:inf>O<ce:inf loc="post">4</ce:inf>/(NiS, CoS<ce:inf loc="post">2</ce:inf> or MoS<ce:inf loc="post">2</ce:inf>)/Bi<ce:inf loc="post">2</ce:inf>Sn<ce:inf loc="post">2</ce:inf>O<ce:inf loc="post">7</ce:inf>, for enhanced solar-light photocatalytic conversions of nitrite and sulfite</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2018</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">17</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">z</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zu</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">A narrow band-gap NiS semiconductor like “conductive ladder” is inserted between Er3+:Y3Al5O12NiGa2O4 and Bi2Sn2O7 to accelerate the electron transfer from conduction band of Bi2Sn2O7 to valence band of NiGa2O4. Er3+:Y3Al5O12 as an up-conversion luminescence agent (from visible-light to ultraviolet-light) provides enough ultraviolet-light for satisfying the energy demand of wide band-gap NiGa2O4. The prepared Z-scheme Er3+:Y3Al5O12@NiGa2O4/NiS/Bi2Sn2O7 composite exhibits a high and stable photocatalytic activity during conversions of nitrite and sulfite.</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Z-scheme photocatalyst</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Sulfite</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Narrow band-gap semiconductor</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Nitrite</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Solar-light photocatalytic conversion</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Wang, Chunquan</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Wang, Guowei</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Li, Guanshu</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Li, Siyi</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Wang, Jun</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Song, Youtao</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="n">KSIEC</subfield><subfield code="a">Zhou, Yuekuan ELSEVIER</subfield><subfield code="t">Climate adaptive optimal design of an aerogel glazing system with the integration of a heuristic teaching-learning-based algorithm in machine learning-based optimization</subfield><subfield code="d">2020</subfield><subfield code="g">Seoul</subfield><subfield code="w">(DE-627)ELV003898202</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:66</subfield><subfield code="g">year:2018</subfield><subfield code="g">day:25</subfield><subfield code="g">month:10</subfield><subfield code="g">pages:141-157</subfield><subfield code="g">extent:17</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1016/j.jiec.2018.05.024</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ELV</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_U</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">52.56</subfield><subfield code="j">Regenerative Energieformen</subfield><subfield code="j">alternative Energieformen</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">66</subfield><subfield code="j">2018</subfield><subfield code="b">25</subfield><subfield code="c">1025</subfield><subfield code="h">141-157</subfield><subfield code="g">17</subfield></datafield></record></collection>
|
| author |
Ma, Xue |
| spellingShingle |
Ma, Xue ddc 530 bkl 52.56 Elsevier Z-scheme photocatalyst Elsevier Sulfite Elsevier Narrow band-gap semiconductor Elsevier Nitrite Elsevier Solar-light photocatalytic conversion Three narrow band-gap semiconductors modified Z-scheme photocatalysts, Er<ce:sup loc="post">3+</ce:sup>:Y<ce:inf loc="post">3</ce:inf>Al<ce:inf loc="post">5</ce:inf>O<ce:inf loc="post">12</ce:inf>NiGa<ce:inf loc="post">2</ce:inf>O<ce:inf loc="post">4</ce:inf>/(NiS, CoS<ce:inf loc="post">2</ce:inf> or MoS<ce:inf loc="post">2</ce:inf>)/Bi<ce:inf loc="post">2</ce:inf>Sn<ce:inf loc="post">2</ce:inf>O<ce:inf loc="post">7</ce:inf>, for enhanced solar-light photocatalytic conversions of nitrite and sulfite |
| authorStr |
Ma, Xue |
| ppnlink_with_tag_str_mv |
@@773@@(DE-627)ELV003898202 |
| format |
electronic Article |
| dewey-ones |
530 - Physics 620 - Engineering & allied operations |
| delete_txt_mv |
keep |
| author_role |
aut |
| collection |
elsevier |
| remote_str |
true |
| illustrated |
Not Illustrated |
| topic_title |
530 620 VZ 52.56 bkl Three narrow band-gap semiconductors modified Z-scheme photocatalysts, Er<ce:sup loc="post">3+</ce:sup>:Y<ce:inf loc="post">3</ce:inf>Al<ce:inf loc="post">5</ce:inf>O<ce:inf loc="post">12</ce:inf>NiGa<ce:inf loc="post">2</ce:inf>O<ce:inf loc="post">4</ce:inf>/(NiS, CoS<ce:inf loc="post">2</ce:inf> or MoS<ce:inf loc="post">2</ce:inf>)/Bi<ce:inf loc="post">2</ce:inf>Sn<ce:inf loc="post">2</ce:inf>O<ce:inf loc="post">7</ce:inf>, for enhanced solar-light photocatalytic conversions of nitrite and sulfite Z-scheme photocatalyst Elsevier Sulfite Elsevier Narrow band-gap semiconductor Elsevier Nitrite Elsevier Solar-light photocatalytic conversion Elsevier |
| topic |
ddc 530 bkl 52.56 Elsevier Z-scheme photocatalyst Elsevier Sulfite Elsevier Narrow band-gap semiconductor Elsevier Nitrite Elsevier Solar-light photocatalytic conversion |
| topic_unstemmed |
ddc 530 bkl 52.56 Elsevier Z-scheme photocatalyst Elsevier Sulfite Elsevier Narrow band-gap semiconductor Elsevier Nitrite Elsevier Solar-light photocatalytic conversion |
| topic_browse |
ddc 530 bkl 52.56 Elsevier Z-scheme photocatalyst Elsevier Sulfite Elsevier Narrow band-gap semiconductor Elsevier Nitrite Elsevier Solar-light photocatalytic conversion |
| format_facet |
Elektronische Aufsätze Aufsätze Elektronische Ressource |
| format_main_str_mv |
Text Zeitschrift/Artikel |
| carriertype_str_mv |
zu |
| author2_variant |
c w cw g w gw g l gl s l sl j w jw y s ys |
| hierarchy_parent_title |
Climate adaptive optimal design of an aerogel glazing system with the integration of a heuristic teaching-learning-based algorithm in machine learning-based optimization |
| hierarchy_parent_id |
ELV003898202 |
| dewey-tens |
530 - Physics 620 - Engineering |
| hierarchy_top_title |
Climate adaptive optimal design of an aerogel glazing system with the integration of a heuristic teaching-learning-based algorithm in machine learning-based optimization |
| isfreeaccess_txt |
false |
| familylinks_str_mv |
(DE-627)ELV003898202 |
| title |
Three narrow band-gap semiconductors modified Z-scheme photocatalysts, Er<ce:sup loc="post">3+</ce:sup>:Y<ce:inf loc="post">3</ce:inf>Al<ce:inf loc="post">5</ce:inf>O<ce:inf loc="post">12</ce:inf>NiGa<ce:inf loc="post">2</ce:inf>O<ce:inf loc="post">4</ce:inf>/(NiS, CoS<ce:inf loc="post">2</ce:inf> or MoS<ce:inf loc="post">2</ce:inf>)/Bi<ce:inf loc="post">2</ce:inf>Sn<ce:inf loc="post">2</ce:inf>O<ce:inf loc="post">7</ce:inf>, for enhanced solar-light photocatalytic conversions of nitrite and sulfite |
| ctrlnum |
(DE-627)ELV044058543 (ELSEVIER)S1226-086X(18)30253-3 |
| title_full |
Three narrow band-gap semiconductors modified Z-scheme photocatalysts, Er<ce:sup loc="post">3+</ce:sup>:Y<ce:inf loc="post">3</ce:inf>Al<ce:inf loc="post">5</ce:inf>O<ce:inf loc="post">12</ce:inf>NiGa<ce:inf loc="post">2</ce:inf>O<ce:inf loc="post">4</ce:inf>/(NiS, CoS<ce:inf loc="post">2</ce:inf> or MoS<ce:inf loc="post">2</ce:inf>)/Bi<ce:inf loc="post">2</ce:inf>Sn<ce:inf loc="post">2</ce:inf>O<ce:inf loc="post">7</ce:inf>, for enhanced solar-light photocatalytic conversions of nitrite and sulfite |
| author_sort |
Ma, Xue |
| journal |
Climate adaptive optimal design of an aerogel glazing system with the integration of a heuristic teaching-learning-based algorithm in machine learning-based optimization |
| journalStr |
Climate adaptive optimal design of an aerogel glazing system with the integration of a heuristic teaching-learning-based algorithm in machine learning-based optimization |
| lang_code |
eng |
| isOA_bool |
false |
| dewey-hundreds |
500 - Science 600 - Technology |
| recordtype |
marc |
| publishDateSort |
2018 |
| contenttype_str_mv |
zzz |
| container_start_page |
141 |
| author_browse |
Ma, Xue |
| container_volume |
66 |
| physical |
17 |
| class |
530 620 VZ 52.56 bkl |
| format_se |
Elektronische Aufsätze |
| author-letter |
Ma, Xue |
| doi_str_mv |
10.1016/j.jiec.2018.05.024 |
| dewey-full |
530 620 |
| title_sort |
narrow band-gap semiconductors modified z-scheme photocatalysts, er<ce:sup loc="post">3+</ce:sup>:y<ce:inf loc="post">3</ce:inf>al<ce:inf loc="post">5</ce:inf>o<ce:inf loc="post">12</ce:inf>niga<ce:inf loc="post">2</ce:inf>o<ce:inf loc="post">4</ce:inf>/(nis, cos<ce:inf loc="post">2</ce:inf> or mos<ce:inf loc="post">2</ce:inf>)/bi<ce:inf loc="post">2</ce:inf>sn<ce:inf loc="post">2</ce:inf>o<ce:inf loc="post">7</ce:inf>, for enhanced solar-light photocatalytic conversions of nitrite and sulfite |
| title_auth |
Three narrow band-gap semiconductors modified Z-scheme photocatalysts, Er<ce:sup loc="post">3+</ce:sup>:Y<ce:inf loc="post">3</ce:inf>Al<ce:inf loc="post">5</ce:inf>O<ce:inf loc="post">12</ce:inf>NiGa<ce:inf loc="post">2</ce:inf>O<ce:inf loc="post">4</ce:inf>/(NiS, CoS<ce:inf loc="post">2</ce:inf> or MoS<ce:inf loc="post">2</ce:inf>)/Bi<ce:inf loc="post">2</ce:inf>Sn<ce:inf loc="post">2</ce:inf>O<ce:inf loc="post">7</ce:inf>, for enhanced solar-light photocatalytic conversions of nitrite and sulfite |
| abstract |
A narrow band-gap NiS semiconductor like “conductive ladder” is inserted between Er3+:Y3Al5O12NiGa2O4 and Bi2Sn2O7 to accelerate the electron transfer from conduction band of Bi2Sn2O7 to valence band of NiGa2O4. Er3+:Y3Al5O12 as an up-conversion luminescence agent (from visible-light to ultraviolet-light) provides enough ultraviolet-light for satisfying the energy demand of wide band-gap NiGa2O4. The prepared Z-scheme Er3+:Y3Al5O12@NiGa2O4/NiS/Bi2Sn2O7 composite exhibits a high and stable photocatalytic activity during conversions of nitrite and sulfite. |
| abstractGer |
A narrow band-gap NiS semiconductor like “conductive ladder” is inserted between Er3+:Y3Al5O12NiGa2O4 and Bi2Sn2O7 to accelerate the electron transfer from conduction band of Bi2Sn2O7 to valence band of NiGa2O4. Er3+:Y3Al5O12 as an up-conversion luminescence agent (from visible-light to ultraviolet-light) provides enough ultraviolet-light for satisfying the energy demand of wide band-gap NiGa2O4. The prepared Z-scheme Er3+:Y3Al5O12@NiGa2O4/NiS/Bi2Sn2O7 composite exhibits a high and stable photocatalytic activity during conversions of nitrite and sulfite. |
| abstract_unstemmed |
A narrow band-gap NiS semiconductor like “conductive ladder” is inserted between Er3+:Y3Al5O12NiGa2O4 and Bi2Sn2O7 to accelerate the electron transfer from conduction band of Bi2Sn2O7 to valence band of NiGa2O4. Er3+:Y3Al5O12 as an up-conversion luminescence agent (from visible-light to ultraviolet-light) provides enough ultraviolet-light for satisfying the energy demand of wide band-gap NiGa2O4. The prepared Z-scheme Er3+:Y3Al5O12@NiGa2O4/NiS/Bi2Sn2O7 composite exhibits a high and stable photocatalytic activity during conversions of nitrite and sulfite. |
| collection_details |
GBV_USEFLAG_U GBV_ELV SYSFLAG_U |
| title_short |
Three narrow band-gap semiconductors modified Z-scheme photocatalysts, Er<ce:sup loc="post">3+</ce:sup>:Y<ce:inf loc="post">3</ce:inf>Al<ce:inf loc="post">5</ce:inf>O<ce:inf loc="post">12</ce:inf>NiGa<ce:inf loc="post">2</ce:inf>O<ce:inf loc="post">4</ce:inf>/(NiS, CoS<ce:inf loc="post">2</ce:inf> or MoS<ce:inf loc="post">2</ce:inf>)/Bi<ce:inf loc="post">2</ce:inf>Sn<ce:inf loc="post">2</ce:inf>O<ce:inf loc="post">7</ce:inf>, for enhanced solar-light photocatalytic conversions of nitrite and sulfite |
| url |
https://doi.org/10.1016/j.jiec.2018.05.024 |
| remote_bool |
true |
| author2 |
Wang, Chunquan Wang, Guowei Li, Guanshu Li, Siyi Wang, Jun Song, Youtao |
| author2Str |
Wang, Chunquan Wang, Guowei Li, Guanshu Li, Siyi Wang, Jun Song, Youtao |
| ppnlink |
ELV003898202 |
| mediatype_str_mv |
z |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| author2_role |
oth oth oth oth oth oth |
| doi_str |
10.1016/j.jiec.2018.05.024 |
| up_date |
2024-07-06T20:28:25.822Z |
| _version_ |
1803862887180009472 |
| fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">ELV044058543</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230624105929.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">181113s2018 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.jiec.2018.05.024</subfield><subfield code="2">doi</subfield></datafield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">GBV00000000000359.pica</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)ELV044058543</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ELSEVIER)S1226-086X(18)30253-3</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="a">620</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">52.56</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Ma, Xue</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="6"><subfield code="a">Three narrow band-gap semiconductors modified Z-scheme photocatalysts, Er<ce:sup loc="post">3+</ce:sup>:Y<ce:inf loc="post">3</ce:inf>Al<ce:inf loc="post">5</ce:inf>O<ce:inf loc="post">12</ce:inf>NiGa<ce:inf loc="post">2</ce:inf>O<ce:inf loc="post">4</ce:inf>/(NiS, CoS<ce:inf loc="post">2</ce:inf> or MoS<ce:inf loc="post">2</ce:inf>)/Bi<ce:inf loc="post">2</ce:inf>Sn<ce:inf loc="post">2</ce:inf>O<ce:inf loc="post">7</ce:inf>, for enhanced solar-light photocatalytic conversions of nitrite and sulfite</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2018</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">17</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">z</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zu</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">A narrow band-gap NiS semiconductor like “conductive ladder” is inserted between Er3+:Y3Al5O12NiGa2O4 and Bi2Sn2O7 to accelerate the electron transfer from conduction band of Bi2Sn2O7 to valence band of NiGa2O4. Er3+:Y3Al5O12 as an up-conversion luminescence agent (from visible-light to ultraviolet-light) provides enough ultraviolet-light for satisfying the energy demand of wide band-gap NiGa2O4. The prepared Z-scheme Er3+:Y3Al5O12@NiGa2O4/NiS/Bi2Sn2O7 composite exhibits a high and stable photocatalytic activity during conversions of nitrite and sulfite.</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Z-scheme photocatalyst</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Sulfite</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Narrow band-gap semiconductor</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Nitrite</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Solar-light photocatalytic conversion</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Wang, Chunquan</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Wang, Guowei</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Li, Guanshu</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Li, Siyi</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Wang, Jun</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Song, Youtao</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="n">KSIEC</subfield><subfield code="a">Zhou, Yuekuan ELSEVIER</subfield><subfield code="t">Climate adaptive optimal design of an aerogel glazing system with the integration of a heuristic teaching-learning-based algorithm in machine learning-based optimization</subfield><subfield code="d">2020</subfield><subfield code="g">Seoul</subfield><subfield code="w">(DE-627)ELV003898202</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:66</subfield><subfield code="g">year:2018</subfield><subfield code="g">day:25</subfield><subfield code="g">month:10</subfield><subfield code="g">pages:141-157</subfield><subfield code="g">extent:17</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1016/j.jiec.2018.05.024</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ELV</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_U</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">52.56</subfield><subfield code="j">Regenerative Energieformen</subfield><subfield code="j">alternative Energieformen</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">66</subfield><subfield code="j">2018</subfield><subfield code="b">25</subfield><subfield code="c">1025</subfield><subfield code="h">141-157</subfield><subfield code="g">17</subfield></datafield></record></collection>
|
| score |
7.4031916 |