Structural properties of epitaxial layers of CdTe, ZnCdTe and HgCdTe
Structural properties of CdTe, Zn"xCd"1"-"xTe and Hg"1"-"x Cd"xTe epitaxial layers and of interfaces between them were measured using a variety of X-ray and surface analytical techniques. CdTe and Zn"xCd"1"-"xTe layers were grown by the tec...
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| Autor*in: |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
1985 |
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| Reproduktion: |
Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 |
|---|---|
| Übergeordnetes Werk: |
in: Thin Solid Films - Amsterdam : Elsevier, 131(1985), 3-4, Seite 267-278 |
| Übergeordnetes Werk: |
volume:131 ; year:1985 ; number:3-4 ; pages:267-278 |
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(DE-627)NLEJ177983345 (DE-599)GBVNLZ177983345 DE-627 ger DE-627 rakwb eng Structural properties of epitaxial layers of CdTe, ZnCdTe and HgCdTe 1985 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Structural properties of CdTe, Zn"xCd"1"-"xTe and Hg"1"-"x Cd"xTe epitaxial layers and of interfaces between them were measured using a variety of X-ray and surface analytical techniques. CdTe and Zn"xCd"1"-"xTe layers were grown by the technique of molecular beam epitaxy. Hg"1"-"xCd"xTe layers were grown by several liquid and vapor phase techniques. CdTe and Zn"xCd"1"-"xTe layers were single phase and did not contain the low angle grains commonly observed in bulk wafers. Compositional transition regions at the interfaces between layers grown by molecular beam epitaxy and their substrates were abrupt. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Dinan, J.H. oth Qadri, S.B. oth in Thin Solid Films Amsterdam : Elsevier 131(1985), 3-4, Seite 267-278 (DE-627)NLEJ177331380 (DE-600)1482896-0 0040-6090 nnns volume:131 year:1985 number:3-4 pages:267-278 http://linkinghub.elsevier.com/retrieve/pii/0040-6090(85)90147-6 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 131 1985 3-4 267-278 |
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Structural properties of epitaxial layers of CdTe, ZnCdTe and HgCdTe |
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Structural properties of CdTe, Zn"xCd"1"-"xTe and Hg"1"-"x Cd"xTe epitaxial layers and of interfaces between them were measured using a variety of X-ray and surface analytical techniques. CdTe and Zn"xCd"1"-"xTe layers were grown by the technique of molecular beam epitaxy. Hg"1"-"xCd"xTe layers were grown by several liquid and vapor phase techniques. CdTe and Zn"xCd"1"-"xTe layers were single phase and did not contain the low angle grains commonly observed in bulk wafers. Compositional transition regions at the interfaces between layers grown by molecular beam epitaxy and their substrates were abrupt. |
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Structural properties of CdTe, Zn"xCd"1"-"xTe and Hg"1"-"x Cd"xTe epitaxial layers and of interfaces between them were measured using a variety of X-ray and surface analytical techniques. CdTe and Zn"xCd"1"-"xTe layers were grown by the technique of molecular beam epitaxy. Hg"1"-"xCd"xTe layers were grown by several liquid and vapor phase techniques. CdTe and Zn"xCd"1"-"xTe layers were single phase and did not contain the low angle grains commonly observed in bulk wafers. Compositional transition regions at the interfaces between layers grown by molecular beam epitaxy and their substrates were abrupt. |
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Structural properties of CdTe, Zn"xCd"1"-"xTe and Hg"1"-"x Cd"xTe epitaxial layers and of interfaces between them were measured using a variety of X-ray and surface analytical techniques. CdTe and Zn"xCd"1"-"xTe layers were grown by the technique of molecular beam epitaxy. Hg"1"-"xCd"xTe layers were grown by several liquid and vapor phase techniques. CdTe and Zn"xCd"1"-"xTe layers were single phase and did not contain the low angle grains commonly observed in bulk wafers. Compositional transition regions at the interfaces between layers grown by molecular beam epitaxy and their substrates were abrupt. |
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