Electron beam induced effects on gas adsorption utilizing auger electron spectroscopy: Co and O"2 on Si - I. Adsorption studies
The effect of electron beam monitored gas adsorption on the clean Si surface is studied using Auger electron spectroscopy. It is shown that the beam affects the AES adsorption signal of CO and O"2 on Si by dissociating the adsorbed molecules on the surface and subsequently promoting diffusion o...
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| Autor*in: |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
1974 |
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| Reproduktion: |
Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 |
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| Übergeordnetes Werk: |
in: Surface Science - Amsterdam : Elsevier, 41(1974), 2, Seite 447-466 |
| Übergeordnetes Werk: |
volume:41 ; year:1974 ; number:2 ; pages:447-466 |
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| 520 | |a The effect of electron beam monitored gas adsorption on the clean Si surface is studied using Auger electron spectroscopy. It is shown that the beam affects the AES adsorption signal of CO and O"2 on Si by dissociating the adsorbed molecules on the surface and subsequently promoting diffusion of atomic oxygen into the bulk. A qualitative explanation of the adsorption data is presented and the initial sticking probability of O"2 on Si (111) surface is estimated to be S0 = 0.21. | ||
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(DE-627)NLEJ179957775 (DE-599)GBVNLZ179957775 DE-627 ger DE-627 rakwb eng Electron beam induced effects on gas adsorption utilizing auger electron spectroscopy: Co and O"2 on Si - I. Adsorption studies 1974 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The effect of electron beam monitored gas adsorption on the clean Si surface is studied using Auger electron spectroscopy. It is shown that the beam affects the AES adsorption signal of CO and O"2 on Si by dissociating the adsorbed molecules on the surface and subsequently promoting diffusion of atomic oxygen into the bulk. A qualitative explanation of the adsorption data is presented and the initial sticking probability of O"2 on Si (111) surface is estimated to be S0 = 0.21. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Kirby, R.E. oth Lichtman, D. oth in Surface Science Amsterdam : Elsevier 41(1974), 2, Seite 447-466 (DE-627)NLEJ177260874 (DE-600)1479030-0 0039-6028 nnns volume:41 year:1974 number:2 pages:447-466 http://linkinghub.elsevier.com/retrieve/pii/0039-6028(74)90061-2 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 41 1974 2 447-466 |
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(DE-627)NLEJ179957775 (DE-599)GBVNLZ179957775 DE-627 ger DE-627 rakwb eng Electron beam induced effects on gas adsorption utilizing auger electron spectroscopy: Co and O"2 on Si - I. Adsorption studies 1974 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The effect of electron beam monitored gas adsorption on the clean Si surface is studied using Auger electron spectroscopy. It is shown that the beam affects the AES adsorption signal of CO and O"2 on Si by dissociating the adsorbed molecules on the surface and subsequently promoting diffusion of atomic oxygen into the bulk. A qualitative explanation of the adsorption data is presented and the initial sticking probability of O"2 on Si (111) surface is estimated to be S0 = 0.21. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Kirby, R.E. oth Lichtman, D. oth in Surface Science Amsterdam : Elsevier 41(1974), 2, Seite 447-466 (DE-627)NLEJ177260874 (DE-600)1479030-0 0039-6028 nnns volume:41 year:1974 number:2 pages:447-466 http://linkinghub.elsevier.com/retrieve/pii/0039-6028(74)90061-2 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 41 1974 2 447-466 |
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(DE-627)NLEJ179957775 (DE-599)GBVNLZ179957775 DE-627 ger DE-627 rakwb eng Electron beam induced effects on gas adsorption utilizing auger electron spectroscopy: Co and O"2 on Si - I. Adsorption studies 1974 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The effect of electron beam monitored gas adsorption on the clean Si surface is studied using Auger electron spectroscopy. It is shown that the beam affects the AES adsorption signal of CO and O"2 on Si by dissociating the adsorbed molecules on the surface and subsequently promoting diffusion of atomic oxygen into the bulk. A qualitative explanation of the adsorption data is presented and the initial sticking probability of O"2 on Si (111) surface is estimated to be S0 = 0.21. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Kirby, R.E. oth Lichtman, D. oth in Surface Science Amsterdam : Elsevier 41(1974), 2, Seite 447-466 (DE-627)NLEJ177260874 (DE-600)1479030-0 0039-6028 nnns volume:41 year:1974 number:2 pages:447-466 http://linkinghub.elsevier.com/retrieve/pii/0039-6028(74)90061-2 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 41 1974 2 447-466 |
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(DE-627)NLEJ179957775 (DE-599)GBVNLZ179957775 DE-627 ger DE-627 rakwb eng Electron beam induced effects on gas adsorption utilizing auger electron spectroscopy: Co and O"2 on Si - I. Adsorption studies 1974 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The effect of electron beam monitored gas adsorption on the clean Si surface is studied using Auger electron spectroscopy. It is shown that the beam affects the AES adsorption signal of CO and O"2 on Si by dissociating the adsorbed molecules on the surface and subsequently promoting diffusion of atomic oxygen into the bulk. A qualitative explanation of the adsorption data is presented and the initial sticking probability of O"2 on Si (111) surface is estimated to be S0 = 0.21. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Kirby, R.E. oth Lichtman, D. oth in Surface Science Amsterdam : Elsevier 41(1974), 2, Seite 447-466 (DE-627)NLEJ177260874 (DE-600)1479030-0 0039-6028 nnns volume:41 year:1974 number:2 pages:447-466 http://linkinghub.elsevier.com/retrieve/pii/0039-6028(74)90061-2 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 41 1974 2 447-466 |
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(DE-627)NLEJ179957775 (DE-599)GBVNLZ179957775 DE-627 ger DE-627 rakwb eng Electron beam induced effects on gas adsorption utilizing auger electron spectroscopy: Co and O"2 on Si - I. Adsorption studies 1974 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The effect of electron beam monitored gas adsorption on the clean Si surface is studied using Auger electron spectroscopy. It is shown that the beam affects the AES adsorption signal of CO and O"2 on Si by dissociating the adsorbed molecules on the surface and subsequently promoting diffusion of atomic oxygen into the bulk. A qualitative explanation of the adsorption data is presented and the initial sticking probability of O"2 on Si (111) surface is estimated to be S0 = 0.21. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Kirby, R.E. oth Lichtman, D. oth in Surface Science Amsterdam : Elsevier 41(1974), 2, Seite 447-466 (DE-627)NLEJ177260874 (DE-600)1479030-0 0039-6028 nnns volume:41 year:1974 number:2 pages:447-466 http://linkinghub.elsevier.com/retrieve/pii/0039-6028(74)90061-2 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 41 1974 2 447-466 |
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electron beam induced effects on gas adsorption utilizing auger electron spectroscopy: co and o"2 on si - i. adsorption studies |
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Electron beam induced effects on gas adsorption utilizing auger electron spectroscopy: Co and O"2 on Si - I. Adsorption studies |
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The effect of electron beam monitored gas adsorption on the clean Si surface is studied using Auger electron spectroscopy. It is shown that the beam affects the AES adsorption signal of CO and O"2 on Si by dissociating the adsorbed molecules on the surface and subsequently promoting diffusion of atomic oxygen into the bulk. A qualitative explanation of the adsorption data is presented and the initial sticking probability of O"2 on Si (111) surface is estimated to be S0 = 0.21. |
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The effect of electron beam monitored gas adsorption on the clean Si surface is studied using Auger electron spectroscopy. It is shown that the beam affects the AES adsorption signal of CO and O"2 on Si by dissociating the adsorbed molecules on the surface and subsequently promoting diffusion of atomic oxygen into the bulk. A qualitative explanation of the adsorption data is presented and the initial sticking probability of O"2 on Si (111) surface is estimated to be S0 = 0.21. |
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The effect of electron beam monitored gas adsorption on the clean Si surface is studied using Auger electron spectroscopy. It is shown that the beam affects the AES adsorption signal of CO and O"2 on Si by dissociating the adsorbed molecules on the surface and subsequently promoting diffusion of atomic oxygen into the bulk. A qualitative explanation of the adsorption data is presented and the initial sticking probability of O"2 on Si (111) surface is estimated to be S0 = 0.21. |
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Electron beam induced effects on gas adsorption utilizing auger electron spectroscopy: Co and O"2 on Si - I. Adsorption studies |
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