Equivalence between bias and external fields in latgs crystal using the scaled relation of dielectrical susceptibility
The dielectric susceptibility Ξ of a LATGS crystal was measured at different temperatures and applied external fields Eext. The internal bias field B is obtained and the data are compared with those in pure TGS using the scaled relation of susceptibility. The equivalence between B and Eext is discus...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Mateos, F. [verfasserIn] Cerro, J. Del [verfasserIn] |
|---|
| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2011 |
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| Übergeordnetes Werk: |
Enthalten in: Ferroelectrics / Letters section - London [u.a.] : Taylor & Francis, 1983, 20(1995), 3-4 vom: 01. Dez., Seite 113-118 |
|---|---|
| Übergeordnetes Werk: |
number:3-4 ; volume:20 ; year:1995 ; month:12 ; day:01 ; pages:113-118 |
| Links: |
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| DOI / URN: |
10.1080/07315179508204291 |
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| 520 | |a The dielectric susceptibility Ξ of a LATGS crystal was measured at different temperatures and applied external fields Eext. The internal bias field B is obtained and the data are compared with those in pure TGS using the scaled relation of susceptibility. The equivalence between B and Eext is discussed. | ||
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10.1080/07315179508204291 doi (DE-627)NLEJ25306743X (TFO)751881049 DE-627 ger DE-627 rda eng Mateos, F. verfasserin aut Equivalence between bias and external fields in latgs crystal using the scaled relation of dielectrical susceptibility 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The dielectric susceptibility Ξ of a LATGS crystal was measured at different temperatures and applied external fields Eext. The internal bias field B is obtained and the data are compared with those in pure TGS using the scaled relation of susceptibility. The equivalence between B and Eext is discussed. Cerro, J. Del verfasserin aut Enthalten in Ferroelectrics / Letters section London [u.a.] : Taylor & Francis, 1983 20(1995), 3-4 vom: 01. Dez., Seite 113-118 Online-Ressource (DE-627)NLEJ253064783 (DE-600)2042933-2 (DE-576)263254003 1563-5228 nnns number:3-4 volume:20 year:1995 month:12 day:01 pages:113-118 https://www.tib.eu/de/suchen/id/tandf%3A155ed2bbe6fc764f70b192ae1bf881ace779d6e8 Digitalisierung Deutschlandweit zugänglich ZDB-1-TFO GBV_NL_ARTICLE AR 3-4 20 1995 12 01 113-118 |
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10.1080/07315179508204291 doi (DE-627)NLEJ25306743X (TFO)751881049 DE-627 ger DE-627 rda eng Mateos, F. verfasserin aut Equivalence between bias and external fields in latgs crystal using the scaled relation of dielectrical susceptibility 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The dielectric susceptibility Ξ of a LATGS crystal was measured at different temperatures and applied external fields Eext. The internal bias field B is obtained and the data are compared with those in pure TGS using the scaled relation of susceptibility. The equivalence between B and Eext is discussed. Cerro, J. Del verfasserin aut Enthalten in Ferroelectrics / Letters section London [u.a.] : Taylor & Francis, 1983 20(1995), 3-4 vom: 01. Dez., Seite 113-118 Online-Ressource (DE-627)NLEJ253064783 (DE-600)2042933-2 (DE-576)263254003 1563-5228 nnns number:3-4 volume:20 year:1995 month:12 day:01 pages:113-118 https://www.tib.eu/de/suchen/id/tandf%3A155ed2bbe6fc764f70b192ae1bf881ace779d6e8 Digitalisierung Deutschlandweit zugänglich ZDB-1-TFO GBV_NL_ARTICLE AR 3-4 20 1995 12 01 113-118 |
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10.1080/07315179508204291 doi (DE-627)NLEJ25306743X (TFO)751881049 DE-627 ger DE-627 rda eng Mateos, F. verfasserin aut Equivalence between bias and external fields in latgs crystal using the scaled relation of dielectrical susceptibility 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The dielectric susceptibility Ξ of a LATGS crystal was measured at different temperatures and applied external fields Eext. The internal bias field B is obtained and the data are compared with those in pure TGS using the scaled relation of susceptibility. The equivalence between B and Eext is discussed. Cerro, J. Del verfasserin aut Enthalten in Ferroelectrics / Letters section London [u.a.] : Taylor & Francis, 1983 20(1995), 3-4 vom: 01. Dez., Seite 113-118 Online-Ressource (DE-627)NLEJ253064783 (DE-600)2042933-2 (DE-576)263254003 1563-5228 nnns number:3-4 volume:20 year:1995 month:12 day:01 pages:113-118 https://www.tib.eu/de/suchen/id/tandf%3A155ed2bbe6fc764f70b192ae1bf881ace779d6e8 Digitalisierung Deutschlandweit zugänglich ZDB-1-TFO GBV_NL_ARTICLE AR 3-4 20 1995 12 01 113-118 |
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10.1080/07315179508204291 doi (DE-627)NLEJ25306743X (TFO)751881049 DE-627 ger DE-627 rda eng Mateos, F. verfasserin aut Equivalence between bias and external fields in latgs crystal using the scaled relation of dielectrical susceptibility 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The dielectric susceptibility Ξ of a LATGS crystal was measured at different temperatures and applied external fields Eext. The internal bias field B is obtained and the data are compared with those in pure TGS using the scaled relation of susceptibility. The equivalence between B and Eext is discussed. Cerro, J. Del verfasserin aut Enthalten in Ferroelectrics / Letters section London [u.a.] : Taylor & Francis, 1983 20(1995), 3-4 vom: 01. Dez., Seite 113-118 Online-Ressource (DE-627)NLEJ253064783 (DE-600)2042933-2 (DE-576)263254003 1563-5228 nnns number:3-4 volume:20 year:1995 month:12 day:01 pages:113-118 https://www.tib.eu/de/suchen/id/tandf%3A155ed2bbe6fc764f70b192ae1bf881ace779d6e8 Digitalisierung Deutschlandweit zugänglich ZDB-1-TFO GBV_NL_ARTICLE AR 3-4 20 1995 12 01 113-118 |
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10.1080/07315179508204291 doi (DE-627)NLEJ25306743X (TFO)751881049 DE-627 ger DE-627 rda eng Mateos, F. verfasserin aut Equivalence between bias and external fields in latgs crystal using the scaled relation of dielectrical susceptibility 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The dielectric susceptibility Ξ of a LATGS crystal was measured at different temperatures and applied external fields Eext. The internal bias field B is obtained and the data are compared with those in pure TGS using the scaled relation of susceptibility. The equivalence between B and Eext is discussed. Cerro, J. Del verfasserin aut Enthalten in Ferroelectrics / Letters section London [u.a.] : Taylor & Francis, 1983 20(1995), 3-4 vom: 01. Dez., Seite 113-118 Online-Ressource (DE-627)NLEJ253064783 (DE-600)2042933-2 (DE-576)263254003 1563-5228 nnns number:3-4 volume:20 year:1995 month:12 day:01 pages:113-118 https://www.tib.eu/de/suchen/id/tandf%3A155ed2bbe6fc764f70b192ae1bf881ace779d6e8 Digitalisierung Deutschlandweit zugänglich ZDB-1-TFO GBV_NL_ARTICLE AR 3-4 20 1995 12 01 113-118 |
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Equivalence between bias and external fields in latgs crystal using the scaled relation of dielectrical susceptibility |
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The dielectric susceptibility Ξ of a LATGS crystal was measured at different temperatures and applied external fields Eext. The internal bias field B is obtained and the data are compared with those in pure TGS using the scaled relation of susceptibility. The equivalence between B and Eext is discussed. |
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The dielectric susceptibility Ξ of a LATGS crystal was measured at different temperatures and applied external fields Eext. The internal bias field B is obtained and the data are compared with those in pure TGS using the scaled relation of susceptibility. The equivalence between B and Eext is discussed. |
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The dielectric susceptibility Ξ of a LATGS crystal was measured at different temperatures and applied external fields Eext. The internal bias field B is obtained and the data are compared with those in pure TGS using the scaled relation of susceptibility. The equivalence between B and Eext is discussed. |
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