Specific features of the photodielectric effect in amorphous $ As_{2} %$ Se_{3} $ layers
Abstract The photodielectric effect (PDE) in amorphous arsenic triselenide ($ As_{2} %$ Se_{3} $) layers has been studied in a weakly varying electric field. As the field frequency decreases in the infra-low-frequency range, the experimentally measured function of relative conductivity coincides wit...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Anisimova, N. I. [verfasserIn] Bordovskii, V. A. [verfasserIn] Grabko, G. I. [verfasserIn] Castro, R. A. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2013 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Technical physics letters - Berlin : Springer Science + Business Media, 1993, 39(2013), 1 vom: Jan., Seite 98-100 |
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| Übergeordnetes Werk: |
volume:39 ; year:2013 ; number:1 ; month:01 ; pages:98-100 |
| Links: |
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| DOI / URN: |
10.1134/S1063785013010318 |
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| Katalog-ID: |
SPR019815360 |
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| 245 | 1 | 0 | |a Specific features of the photodielectric effect in amorphous $ As_{2} %$ Se_{3} $ layers |
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| 520 | |a Abstract The photodielectric effect (PDE) in amorphous arsenic triselenide ($ As_{2} %$ Se_{3} $) layers has been studied in a weakly varying electric field. As the field frequency decreases in the infra-low-frequency range, the experimentally measured function of relative conductivity coincides with the theoretically predicted behavior. It is established that the frequency dependence of the recombination coefficient exhibits a minimum. | ||
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| 650 | 4 | |a Chalcogenide Semiconductor |7 (dpeaa)DE-He213 | |
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| 700 | 1 | |a Grabko, G. I. |e verfasserin |4 aut | |
| 700 | 1 | |a Castro, R. A. |e verfasserin |4 aut | |
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10.1134/S1063785013010318 doi (DE-627)SPR019815360 (SPR)S1063785013010318-e DE-627 ger DE-627 rakwb eng 530 ASE 33.00 bkl 50.30 bkl Anisimova, N. I. verfasserin aut Specific features of the photodielectric effect in amorphous $ As_{2} %$ Se_{3} $ layers 2013 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The photodielectric effect (PDE) in amorphous arsenic triselenide ($ As_{2} %$ Se_{3} $) layers has been studied in a weakly varying electric field. As the field frequency decreases in the infra-low-frequency range, the experimentally measured function of relative conductivity coincides with the theoretically predicted behavior. It is established that the frequency dependence of the recombination coefficient exhibits a minimum. Technical Physic Letter (dpeaa)DE-He213 Polarization Process (dpeaa)DE-He213 Dark Conductivity (dpeaa)DE-He213 Recombination Coefficient (dpeaa)DE-He213 Chalcogenide Semiconductor (dpeaa)DE-He213 Bordovskii, V. A. verfasserin aut Grabko, G. I. verfasserin aut Castro, R. A. verfasserin aut Enthalten in Technical physics letters Berlin : Springer Science + Business Media, 1993 39(2013), 1 vom: Jan., Seite 98-100 (DE-627)319123839 (DE-600)2023931-2 1090-6533 nnns volume:39 year:2013 number:1 month:01 pages:98-100 https://dx.doi.org/10.1134/S1063785013010318 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OPC-MAT SSG-OPC-ASE GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 ASE 50.30 ASE AR 39 2013 1 01 98-100 |
| spelling |
10.1134/S1063785013010318 doi (DE-627)SPR019815360 (SPR)S1063785013010318-e DE-627 ger DE-627 rakwb eng 530 ASE 33.00 bkl 50.30 bkl Anisimova, N. I. verfasserin aut Specific features of the photodielectric effect in amorphous $ As_{2} %$ Se_{3} $ layers 2013 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The photodielectric effect (PDE) in amorphous arsenic triselenide ($ As_{2} %$ Se_{3} $) layers has been studied in a weakly varying electric field. As the field frequency decreases in the infra-low-frequency range, the experimentally measured function of relative conductivity coincides with the theoretically predicted behavior. It is established that the frequency dependence of the recombination coefficient exhibits a minimum. Technical Physic Letter (dpeaa)DE-He213 Polarization Process (dpeaa)DE-He213 Dark Conductivity (dpeaa)DE-He213 Recombination Coefficient (dpeaa)DE-He213 Chalcogenide Semiconductor (dpeaa)DE-He213 Bordovskii, V. A. verfasserin aut Grabko, G. I. verfasserin aut Castro, R. A. verfasserin aut Enthalten in Technical physics letters Berlin : Springer Science + Business Media, 1993 39(2013), 1 vom: Jan., Seite 98-100 (DE-627)319123839 (DE-600)2023931-2 1090-6533 nnns volume:39 year:2013 number:1 month:01 pages:98-100 https://dx.doi.org/10.1134/S1063785013010318 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OPC-MAT SSG-OPC-ASE GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 ASE 50.30 ASE AR 39 2013 1 01 98-100 |
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10.1134/S1063785013010318 doi (DE-627)SPR019815360 (SPR)S1063785013010318-e DE-627 ger DE-627 rakwb eng 530 ASE 33.00 bkl 50.30 bkl Anisimova, N. I. verfasserin aut Specific features of the photodielectric effect in amorphous $ As_{2} %$ Se_{3} $ layers 2013 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The photodielectric effect (PDE) in amorphous arsenic triselenide ($ As_{2} %$ Se_{3} $) layers has been studied in a weakly varying electric field. As the field frequency decreases in the infra-low-frequency range, the experimentally measured function of relative conductivity coincides with the theoretically predicted behavior. It is established that the frequency dependence of the recombination coefficient exhibits a minimum. Technical Physic Letter (dpeaa)DE-He213 Polarization Process (dpeaa)DE-He213 Dark Conductivity (dpeaa)DE-He213 Recombination Coefficient (dpeaa)DE-He213 Chalcogenide Semiconductor (dpeaa)DE-He213 Bordovskii, V. A. verfasserin aut Grabko, G. I. verfasserin aut Castro, R. A. verfasserin aut Enthalten in Technical physics letters Berlin : Springer Science + Business Media, 1993 39(2013), 1 vom: Jan., Seite 98-100 (DE-627)319123839 (DE-600)2023931-2 1090-6533 nnns volume:39 year:2013 number:1 month:01 pages:98-100 https://dx.doi.org/10.1134/S1063785013010318 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OPC-MAT SSG-OPC-ASE GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 ASE 50.30 ASE AR 39 2013 1 01 98-100 |
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10.1134/S1063785013010318 doi (DE-627)SPR019815360 (SPR)S1063785013010318-e DE-627 ger DE-627 rakwb eng 530 ASE 33.00 bkl 50.30 bkl Anisimova, N. I. verfasserin aut Specific features of the photodielectric effect in amorphous $ As_{2} %$ Se_{3} $ layers 2013 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The photodielectric effect (PDE) in amorphous arsenic triselenide ($ As_{2} %$ Se_{3} $) layers has been studied in a weakly varying electric field. As the field frequency decreases in the infra-low-frequency range, the experimentally measured function of relative conductivity coincides with the theoretically predicted behavior. It is established that the frequency dependence of the recombination coefficient exhibits a minimum. Technical Physic Letter (dpeaa)DE-He213 Polarization Process (dpeaa)DE-He213 Dark Conductivity (dpeaa)DE-He213 Recombination Coefficient (dpeaa)DE-He213 Chalcogenide Semiconductor (dpeaa)DE-He213 Bordovskii, V. A. verfasserin aut Grabko, G. I. verfasserin aut Castro, R. A. verfasserin aut Enthalten in Technical physics letters Berlin : Springer Science + Business Media, 1993 39(2013), 1 vom: Jan., Seite 98-100 (DE-627)319123839 (DE-600)2023931-2 1090-6533 nnns volume:39 year:2013 number:1 month:01 pages:98-100 https://dx.doi.org/10.1134/S1063785013010318 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OPC-MAT SSG-OPC-ASE GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 ASE 50.30 ASE AR 39 2013 1 01 98-100 |
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10.1134/S1063785013010318 doi (DE-627)SPR019815360 (SPR)S1063785013010318-e DE-627 ger DE-627 rakwb eng 530 ASE 33.00 bkl 50.30 bkl Anisimova, N. I. verfasserin aut Specific features of the photodielectric effect in amorphous $ As_{2} %$ Se_{3} $ layers 2013 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The photodielectric effect (PDE) in amorphous arsenic triselenide ($ As_{2} %$ Se_{3} $) layers has been studied in a weakly varying electric field. As the field frequency decreases in the infra-low-frequency range, the experimentally measured function of relative conductivity coincides with the theoretically predicted behavior. It is established that the frequency dependence of the recombination coefficient exhibits a minimum. Technical Physic Letter (dpeaa)DE-He213 Polarization Process (dpeaa)DE-He213 Dark Conductivity (dpeaa)DE-He213 Recombination Coefficient (dpeaa)DE-He213 Chalcogenide Semiconductor (dpeaa)DE-He213 Bordovskii, V. A. verfasserin aut Grabko, G. I. verfasserin aut Castro, R. A. verfasserin aut Enthalten in Technical physics letters Berlin : Springer Science + Business Media, 1993 39(2013), 1 vom: Jan., Seite 98-100 (DE-627)319123839 (DE-600)2023931-2 1090-6533 nnns volume:39 year:2013 number:1 month:01 pages:98-100 https://dx.doi.org/10.1134/S1063785013010318 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OPC-MAT SSG-OPC-ASE GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 ASE 50.30 ASE AR 39 2013 1 01 98-100 |
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Anisimova, N. I. |
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Anisimova, N. I. ddc 530 bkl 33.00 bkl 50.30 misc Technical Physic Letter misc Polarization Process misc Dark Conductivity misc Recombination Coefficient misc Chalcogenide Semiconductor Specific features of the photodielectric effect in amorphous $ As_{2} %$ Se_{3} $ layers |
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530 ASE 33.00 bkl 50.30 bkl Specific features of the photodielectric effect in amorphous $ As_{2} %$ Se_{3} $ layers Technical Physic Letter (dpeaa)DE-He213 Polarization Process (dpeaa)DE-He213 Dark Conductivity (dpeaa)DE-He213 Recombination Coefficient (dpeaa)DE-He213 Chalcogenide Semiconductor (dpeaa)DE-He213 |
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ddc 530 bkl 33.00 bkl 50.30 misc Technical Physic Letter misc Polarization Process misc Dark Conductivity misc Recombination Coefficient misc Chalcogenide Semiconductor |
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ddc 530 bkl 33.00 bkl 50.30 misc Technical Physic Letter misc Polarization Process misc Dark Conductivity misc Recombination Coefficient misc Chalcogenide Semiconductor |
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Specific features of the photodielectric effect in amorphous $ As_{2} %$ Se_{3} $ layers |
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Specific features of the photodielectric effect in amorphous $ As_{2} %$ Se_{3} $ layers |
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Anisimova, N. I. |
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Anisimova, N. I. Bordovskii, V. A. Grabko, G. I. Castro, R. A. |
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specific features of the photodielectric effect in amorphous $ as_{2} %$ se_{3} $ layers |
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Specific features of the photodielectric effect in amorphous $ As_{2} %$ Se_{3} $ layers |
| abstract |
Abstract The photodielectric effect (PDE) in amorphous arsenic triselenide ($ As_{2} %$ Se_{3} $) layers has been studied in a weakly varying electric field. As the field frequency decreases in the infra-low-frequency range, the experimentally measured function of relative conductivity coincides with the theoretically predicted behavior. It is established that the frequency dependence of the recombination coefficient exhibits a minimum. |
| abstractGer |
Abstract The photodielectric effect (PDE) in amorphous arsenic triselenide ($ As_{2} %$ Se_{3} $) layers has been studied in a weakly varying electric field. As the field frequency decreases in the infra-low-frequency range, the experimentally measured function of relative conductivity coincides with the theoretically predicted behavior. It is established that the frequency dependence of the recombination coefficient exhibits a minimum. |
| abstract_unstemmed |
Abstract The photodielectric effect (PDE) in amorphous arsenic triselenide ($ As_{2} %$ Se_{3} $) layers has been studied in a weakly varying electric field. As the field frequency decreases in the infra-low-frequency range, the experimentally measured function of relative conductivity coincides with the theoretically predicted behavior. It is established that the frequency dependence of the recombination coefficient exhibits a minimum. |
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| title_short |
Specific features of the photodielectric effect in amorphous $ As_{2} %$ Se_{3} $ layers |
| url |
https://dx.doi.org/10.1134/S1063785013010318 |
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| author2 |
Bordovskii, V. A. Grabko, G. I. Castro, R. A. |
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Bordovskii, V. A. Grabko, G. I. Castro, R. A. |
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319123839 |
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| doi_str |
10.1134/S1063785013010318 |
| up_date |
2024-07-04T03:00:50.388Z |
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1803615784553938944 |
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