A Method for Copper Direct Bonding Reduced by Ethylene Glycol
Abstract A method for direct bonding of Cu with reduction by ethylene glycol in an ambient atmosphere was investigated. A Cu-sputtered SiC die was directly bonded to a direct-bonded Cu substrate at 300°C for 10 min. No amorphous phase was formed at the direct bonding interface, and a continuous bond...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Baated, Alongheng [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2020 |
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| Schlagwörter: |
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| Anmerkung: |
© The Minerals, Metals & Materials Society 2020 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of electronic materials - Warrendale, Pa : TMS, 1972, 49(2020), 3 vom: 02. Jan., Seite 2095-2099 |
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| Übergeordnetes Werk: |
volume:49 ; year:2020 ; number:3 ; day:02 ; month:01 ; pages:2095-2099 |
| Links: |
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| DOI / URN: |
10.1007/s11664-019-07788-1 |
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| Katalog-ID: |
SPR021566070 |
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| 245 | 1 | 2 | |a A Method for Copper Direct Bonding Reduced by Ethylene Glycol |
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| 520 | |a Abstract A method for direct bonding of Cu with reduction by ethylene glycol in an ambient atmosphere was investigated. A Cu-sputtered SiC die was directly bonded to a direct-bonded Cu substrate at 300°C for 10 min. No amorphous phase was formed at the direct bonding interface, and a continuous bonding interface was obtained. Abnormal grain growth occurred in the Cu-sputtered layer, and the orientation changed with that of the grains of the Cu plate on the substrate. The Cu direct bonding interface was stable against thermal fatigue between −55°C and 175°C. | ||
| 650 | 4 | |a Direct bonding |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a diffusion bonding |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a copper |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a ethylene glycol |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a thermal cycle |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a grain recrystallization |7 (dpeaa)DE-He213 | |
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| 856 | 4 | 0 | |u https://dx.doi.org/10.1007/s11664-019-07788-1 |z lizenzpflichtig |3 Volltext |
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10.1007/s11664-019-07788-1 doi (DE-627)SPR021566070 (SPR)s11664-019-07788-1-e DE-627 ger DE-627 rakwb eng Baated, Alongheng verfasserin aut A Method for Copper Direct Bonding Reduced by Ethylene Glycol 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Minerals, Metals & Materials Society 2020 Abstract A method for direct bonding of Cu with reduction by ethylene glycol in an ambient atmosphere was investigated. A Cu-sputtered SiC die was directly bonded to a direct-bonded Cu substrate at 300°C for 10 min. No amorphous phase was formed at the direct bonding interface, and a continuous bonding interface was obtained. Abnormal grain growth occurred in the Cu-sputtered layer, and the orientation changed with that of the grains of the Cu plate on the substrate. The Cu direct bonding interface was stable against thermal fatigue between −55°C and 175°C. Direct bonding (dpeaa)DE-He213 diffusion bonding (dpeaa)DE-He213 copper (dpeaa)DE-He213 ethylene glycol (dpeaa)DE-He213 thermal cycle (dpeaa)DE-He213 grain recrystallization (dpeaa)DE-He213 Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 49(2020), 3 vom: 02. Jan., Seite 2095-2099 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:49 year:2020 number:3 day:02 month:01 pages:2095-2099 https://dx.doi.org/10.1007/s11664-019-07788-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 49 2020 3 02 01 2095-2099 |
| spelling |
10.1007/s11664-019-07788-1 doi (DE-627)SPR021566070 (SPR)s11664-019-07788-1-e DE-627 ger DE-627 rakwb eng Baated, Alongheng verfasserin aut A Method for Copper Direct Bonding Reduced by Ethylene Glycol 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Minerals, Metals & Materials Society 2020 Abstract A method for direct bonding of Cu with reduction by ethylene glycol in an ambient atmosphere was investigated. A Cu-sputtered SiC die was directly bonded to a direct-bonded Cu substrate at 300°C for 10 min. No amorphous phase was formed at the direct bonding interface, and a continuous bonding interface was obtained. Abnormal grain growth occurred in the Cu-sputtered layer, and the orientation changed with that of the grains of the Cu plate on the substrate. The Cu direct bonding interface was stable against thermal fatigue between −55°C and 175°C. Direct bonding (dpeaa)DE-He213 diffusion bonding (dpeaa)DE-He213 copper (dpeaa)DE-He213 ethylene glycol (dpeaa)DE-He213 thermal cycle (dpeaa)DE-He213 grain recrystallization (dpeaa)DE-He213 Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 49(2020), 3 vom: 02. Jan., Seite 2095-2099 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:49 year:2020 number:3 day:02 month:01 pages:2095-2099 https://dx.doi.org/10.1007/s11664-019-07788-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 49 2020 3 02 01 2095-2099 |
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10.1007/s11664-019-07788-1 doi (DE-627)SPR021566070 (SPR)s11664-019-07788-1-e DE-627 ger DE-627 rakwb eng Baated, Alongheng verfasserin aut A Method for Copper Direct Bonding Reduced by Ethylene Glycol 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Minerals, Metals & Materials Society 2020 Abstract A method for direct bonding of Cu with reduction by ethylene glycol in an ambient atmosphere was investigated. A Cu-sputtered SiC die was directly bonded to a direct-bonded Cu substrate at 300°C for 10 min. No amorphous phase was formed at the direct bonding interface, and a continuous bonding interface was obtained. Abnormal grain growth occurred in the Cu-sputtered layer, and the orientation changed with that of the grains of the Cu plate on the substrate. The Cu direct bonding interface was stable against thermal fatigue between −55°C and 175°C. Direct bonding (dpeaa)DE-He213 diffusion bonding (dpeaa)DE-He213 copper (dpeaa)DE-He213 ethylene glycol (dpeaa)DE-He213 thermal cycle (dpeaa)DE-He213 grain recrystallization (dpeaa)DE-He213 Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 49(2020), 3 vom: 02. Jan., Seite 2095-2099 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:49 year:2020 number:3 day:02 month:01 pages:2095-2099 https://dx.doi.org/10.1007/s11664-019-07788-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 49 2020 3 02 01 2095-2099 |
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10.1007/s11664-019-07788-1 doi (DE-627)SPR021566070 (SPR)s11664-019-07788-1-e DE-627 ger DE-627 rakwb eng Baated, Alongheng verfasserin aut A Method for Copper Direct Bonding Reduced by Ethylene Glycol 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Minerals, Metals & Materials Society 2020 Abstract A method for direct bonding of Cu with reduction by ethylene glycol in an ambient atmosphere was investigated. A Cu-sputtered SiC die was directly bonded to a direct-bonded Cu substrate at 300°C for 10 min. No amorphous phase was formed at the direct bonding interface, and a continuous bonding interface was obtained. Abnormal grain growth occurred in the Cu-sputtered layer, and the orientation changed with that of the grains of the Cu plate on the substrate. The Cu direct bonding interface was stable against thermal fatigue between −55°C and 175°C. Direct bonding (dpeaa)DE-He213 diffusion bonding (dpeaa)DE-He213 copper (dpeaa)DE-He213 ethylene glycol (dpeaa)DE-He213 thermal cycle (dpeaa)DE-He213 grain recrystallization (dpeaa)DE-He213 Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 49(2020), 3 vom: 02. Jan., Seite 2095-2099 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:49 year:2020 number:3 day:02 month:01 pages:2095-2099 https://dx.doi.org/10.1007/s11664-019-07788-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 49 2020 3 02 01 2095-2099 |
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10.1007/s11664-019-07788-1 doi (DE-627)SPR021566070 (SPR)s11664-019-07788-1-e DE-627 ger DE-627 rakwb eng Baated, Alongheng verfasserin aut A Method for Copper Direct Bonding Reduced by Ethylene Glycol 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Minerals, Metals & Materials Society 2020 Abstract A method for direct bonding of Cu with reduction by ethylene glycol in an ambient atmosphere was investigated. A Cu-sputtered SiC die was directly bonded to a direct-bonded Cu substrate at 300°C for 10 min. No amorphous phase was formed at the direct bonding interface, and a continuous bonding interface was obtained. Abnormal grain growth occurred in the Cu-sputtered layer, and the orientation changed with that of the grains of the Cu plate on the substrate. The Cu direct bonding interface was stable against thermal fatigue between −55°C and 175°C. Direct bonding (dpeaa)DE-He213 diffusion bonding (dpeaa)DE-He213 copper (dpeaa)DE-He213 ethylene glycol (dpeaa)DE-He213 thermal cycle (dpeaa)DE-He213 grain recrystallization (dpeaa)DE-He213 Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 49(2020), 3 vom: 02. Jan., Seite 2095-2099 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:49 year:2020 number:3 day:02 month:01 pages:2095-2099 https://dx.doi.org/10.1007/s11664-019-07788-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 49 2020 3 02 01 2095-2099 |
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Baated, Alongheng |
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Baated, Alongheng misc Direct bonding misc diffusion bonding misc copper misc ethylene glycol misc thermal cycle misc grain recrystallization A Method for Copper Direct Bonding Reduced by Ethylene Glycol |
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A Method for Copper Direct Bonding Reduced by Ethylene Glycol Direct bonding (dpeaa)DE-He213 diffusion bonding (dpeaa)DE-He213 copper (dpeaa)DE-He213 ethylene glycol (dpeaa)DE-He213 thermal cycle (dpeaa)DE-He213 grain recrystallization (dpeaa)DE-He213 |
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method for copper direct bonding reduced by ethylene glycol |
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A Method for Copper Direct Bonding Reduced by Ethylene Glycol |
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Abstract A method for direct bonding of Cu with reduction by ethylene glycol in an ambient atmosphere was investigated. A Cu-sputtered SiC die was directly bonded to a direct-bonded Cu substrate at 300°C for 10 min. No amorphous phase was formed at the direct bonding interface, and a continuous bonding interface was obtained. Abnormal grain growth occurred in the Cu-sputtered layer, and the orientation changed with that of the grains of the Cu plate on the substrate. The Cu direct bonding interface was stable against thermal fatigue between −55°C and 175°C. © The Minerals, Metals & Materials Society 2020 |
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Abstract A method for direct bonding of Cu with reduction by ethylene glycol in an ambient atmosphere was investigated. A Cu-sputtered SiC die was directly bonded to a direct-bonded Cu substrate at 300°C for 10 min. No amorphous phase was formed at the direct bonding interface, and a continuous bonding interface was obtained. Abnormal grain growth occurred in the Cu-sputtered layer, and the orientation changed with that of the grains of the Cu plate on the substrate. The Cu direct bonding interface was stable against thermal fatigue between −55°C and 175°C. © The Minerals, Metals & Materials Society 2020 |
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Abstract A method for direct bonding of Cu with reduction by ethylene glycol in an ambient atmosphere was investigated. A Cu-sputtered SiC die was directly bonded to a direct-bonded Cu substrate at 300°C for 10 min. No amorphous phase was formed at the direct bonding interface, and a continuous bonding interface was obtained. Abnormal grain growth occurred in the Cu-sputtered layer, and the orientation changed with that of the grains of the Cu plate on the substrate. The Cu direct bonding interface was stable against thermal fatigue between −55°C and 175°C. © The Minerals, Metals & Materials Society 2020 |
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