InP and InGaAsP Semiconducting Materials for Optical Communications
Summary A brief overview is presented of materials aspects of InP and InGaAsP compound semiconductors that are being used in state-of-the-art lightwave communication systems. It is feasible to grow high-quality InP single crystals from which suitable substrates can be cut for device growth. Lattice-...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Mahajan, S. [verfasserIn] |
|---|
| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
1984 |
|---|
| Schlagwörter: |
|---|
| Anmerkung: |
© The Minerals, Metals & Materials Society 1984 |
|---|
| Übergeordnetes Werk: |
Enthalten in: JOM - New York, NY : Springer Science + Business Media, 1989, 36(1984), 8 vom: Aug., Seite 37-41 |
|---|---|
| Übergeordnetes Werk: |
volume:36 ; year:1984 ; number:8 ; month:08 ; pages:37-41 |
| Links: |
|---|
| DOI / URN: |
10.1007/BF03338527 |
|---|
| Katalog-ID: |
SPR022676422 |
|---|
| LEADER | 01000caa a22002652 4500 | ||
|---|---|---|---|
| 001 | SPR022676422 | ||
| 003 | DE-627 | ||
| 005 | 20230330070241.0 | ||
| 007 | cr uuu---uuuuu | ||
| 008 | 201006s1984 xx |||||o 00| ||eng c | ||
| 024 | 7 | |a 10.1007/BF03338527 |2 doi | |
| 035 | |a (DE-627)SPR022676422 | ||
| 035 | |a (SPR)BF03338527-e | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 100 | 1 | |a Mahajan, S. |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a InP and InGaAsP Semiconducting Materials for Optical Communications |
| 264 | 1 | |c 1984 | |
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a Computermedien |b c |2 rdamedia | ||
| 338 | |a Online-Ressource |b cr |2 rdacarrier | ||
| 500 | |a © The Minerals, Metals & Materials Society 1984 | ||
| 520 | |a Summary A brief overview is presented of materials aspects of InP and InGaAsP compound semiconductors that are being used in state-of-the-art lightwave communication systems. It is feasible to grow high-quality InP single crystals from which suitable substrates can be cut for device growth. Lattice-matched InGaAsP layers of different compositions can be grown on these substrates by liquid phase epitaxy. Dislocations in the underlying substrates constitute a major source of defects in epitaxial layers. Also, macroscopic defects in epi layers can be caused by melt carryover during the layer formation process. Finally, another problem, dark spot defects, can result from electromigration of gold. | ||
| 650 | 4 | |a Epitaxial Layer |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Liquid Phase Epitaxy |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Liquid Phase Epitaxial |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Macroscopic Defect |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Liquid Encapsulate Czochralski |7 (dpeaa)DE-He213 | |
| 700 | 1 | |a Keramidas, Vassillis G. |4 aut | |
| 700 | 1 | |a Wernick, Jack H. |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t JOM |d New York, NY : Springer Science + Business Media, 1989 |g 36(1984), 8 vom: Aug., Seite 37-41 |w (DE-627)31368197X |w (DE-600)2002726-6 |x 1543-1851 |7 nnns |
| 773 | 1 | 8 | |g volume:36 |g year:1984 |g number:8 |g month:08 |g pages:37-41 |
| 856 | 4 | 0 | |u https://dx.doi.org/10.1007/BF03338527 |z lizenzpflichtig |3 Volltext |
| 912 | |a GBV_USEFLAG_A | ||
| 912 | |a SYSFLAG_A | ||
| 912 | |a GBV_SPRINGER | ||
| 951 | |a AR | ||
| 952 | |d 36 |j 1984 |e 8 |c 08 |h 37-41 | ||
| author_variant |
s m sm v g k vg vgk j h w jh jhw |
|---|---|
| matchkey_str |
article:15431851:1984----::nadnassmcnutnmtrasootc |
| hierarchy_sort_str |
1984 |
| publishDate |
1984 |
| allfields |
10.1007/BF03338527 doi (DE-627)SPR022676422 (SPR)BF03338527-e DE-627 ger DE-627 rakwb eng Mahajan, S. verfasserin aut InP and InGaAsP Semiconducting Materials for Optical Communications 1984 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Minerals, Metals & Materials Society 1984 Summary A brief overview is presented of materials aspects of InP and InGaAsP compound semiconductors that are being used in state-of-the-art lightwave communication systems. It is feasible to grow high-quality InP single crystals from which suitable substrates can be cut for device growth. Lattice-matched InGaAsP layers of different compositions can be grown on these substrates by liquid phase epitaxy. Dislocations in the underlying substrates constitute a major source of defects in epitaxial layers. Also, macroscopic defects in epi layers can be caused by melt carryover during the layer formation process. Finally, another problem, dark spot defects, can result from electromigration of gold. Epitaxial Layer (dpeaa)DE-He213 Liquid Phase Epitaxy (dpeaa)DE-He213 Liquid Phase Epitaxial (dpeaa)DE-He213 Macroscopic Defect (dpeaa)DE-He213 Liquid Encapsulate Czochralski (dpeaa)DE-He213 Keramidas, Vassillis G. aut Wernick, Jack H. aut Enthalten in JOM New York, NY : Springer Science + Business Media, 1989 36(1984), 8 vom: Aug., Seite 37-41 (DE-627)31368197X (DE-600)2002726-6 1543-1851 nnns volume:36 year:1984 number:8 month:08 pages:37-41 https://dx.doi.org/10.1007/BF03338527 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER AR 36 1984 8 08 37-41 |
| spelling |
10.1007/BF03338527 doi (DE-627)SPR022676422 (SPR)BF03338527-e DE-627 ger DE-627 rakwb eng Mahajan, S. verfasserin aut InP and InGaAsP Semiconducting Materials for Optical Communications 1984 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Minerals, Metals & Materials Society 1984 Summary A brief overview is presented of materials aspects of InP and InGaAsP compound semiconductors that are being used in state-of-the-art lightwave communication systems. It is feasible to grow high-quality InP single crystals from which suitable substrates can be cut for device growth. Lattice-matched InGaAsP layers of different compositions can be grown on these substrates by liquid phase epitaxy. Dislocations in the underlying substrates constitute a major source of defects in epitaxial layers. Also, macroscopic defects in epi layers can be caused by melt carryover during the layer formation process. Finally, another problem, dark spot defects, can result from electromigration of gold. Epitaxial Layer (dpeaa)DE-He213 Liquid Phase Epitaxy (dpeaa)DE-He213 Liquid Phase Epitaxial (dpeaa)DE-He213 Macroscopic Defect (dpeaa)DE-He213 Liquid Encapsulate Czochralski (dpeaa)DE-He213 Keramidas, Vassillis G. aut Wernick, Jack H. aut Enthalten in JOM New York, NY : Springer Science + Business Media, 1989 36(1984), 8 vom: Aug., Seite 37-41 (DE-627)31368197X (DE-600)2002726-6 1543-1851 nnns volume:36 year:1984 number:8 month:08 pages:37-41 https://dx.doi.org/10.1007/BF03338527 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER AR 36 1984 8 08 37-41 |
| allfields_unstemmed |
10.1007/BF03338527 doi (DE-627)SPR022676422 (SPR)BF03338527-e DE-627 ger DE-627 rakwb eng Mahajan, S. verfasserin aut InP and InGaAsP Semiconducting Materials for Optical Communications 1984 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Minerals, Metals & Materials Society 1984 Summary A brief overview is presented of materials aspects of InP and InGaAsP compound semiconductors that are being used in state-of-the-art lightwave communication systems. It is feasible to grow high-quality InP single crystals from which suitable substrates can be cut for device growth. Lattice-matched InGaAsP layers of different compositions can be grown on these substrates by liquid phase epitaxy. Dislocations in the underlying substrates constitute a major source of defects in epitaxial layers. Also, macroscopic defects in epi layers can be caused by melt carryover during the layer formation process. Finally, another problem, dark spot defects, can result from electromigration of gold. Epitaxial Layer (dpeaa)DE-He213 Liquid Phase Epitaxy (dpeaa)DE-He213 Liquid Phase Epitaxial (dpeaa)DE-He213 Macroscopic Defect (dpeaa)DE-He213 Liquid Encapsulate Czochralski (dpeaa)DE-He213 Keramidas, Vassillis G. aut Wernick, Jack H. aut Enthalten in JOM New York, NY : Springer Science + Business Media, 1989 36(1984), 8 vom: Aug., Seite 37-41 (DE-627)31368197X (DE-600)2002726-6 1543-1851 nnns volume:36 year:1984 number:8 month:08 pages:37-41 https://dx.doi.org/10.1007/BF03338527 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER AR 36 1984 8 08 37-41 |
| allfieldsGer |
10.1007/BF03338527 doi (DE-627)SPR022676422 (SPR)BF03338527-e DE-627 ger DE-627 rakwb eng Mahajan, S. verfasserin aut InP and InGaAsP Semiconducting Materials for Optical Communications 1984 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Minerals, Metals & Materials Society 1984 Summary A brief overview is presented of materials aspects of InP and InGaAsP compound semiconductors that are being used in state-of-the-art lightwave communication systems. It is feasible to grow high-quality InP single crystals from which suitable substrates can be cut for device growth. Lattice-matched InGaAsP layers of different compositions can be grown on these substrates by liquid phase epitaxy. Dislocations in the underlying substrates constitute a major source of defects in epitaxial layers. Also, macroscopic defects in epi layers can be caused by melt carryover during the layer formation process. Finally, another problem, dark spot defects, can result from electromigration of gold. Epitaxial Layer (dpeaa)DE-He213 Liquid Phase Epitaxy (dpeaa)DE-He213 Liquid Phase Epitaxial (dpeaa)DE-He213 Macroscopic Defect (dpeaa)DE-He213 Liquid Encapsulate Czochralski (dpeaa)DE-He213 Keramidas, Vassillis G. aut Wernick, Jack H. aut Enthalten in JOM New York, NY : Springer Science + Business Media, 1989 36(1984), 8 vom: Aug., Seite 37-41 (DE-627)31368197X (DE-600)2002726-6 1543-1851 nnns volume:36 year:1984 number:8 month:08 pages:37-41 https://dx.doi.org/10.1007/BF03338527 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER AR 36 1984 8 08 37-41 |
| allfieldsSound |
10.1007/BF03338527 doi (DE-627)SPR022676422 (SPR)BF03338527-e DE-627 ger DE-627 rakwb eng Mahajan, S. verfasserin aut InP and InGaAsP Semiconducting Materials for Optical Communications 1984 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Minerals, Metals & Materials Society 1984 Summary A brief overview is presented of materials aspects of InP and InGaAsP compound semiconductors that are being used in state-of-the-art lightwave communication systems. It is feasible to grow high-quality InP single crystals from which suitable substrates can be cut for device growth. Lattice-matched InGaAsP layers of different compositions can be grown on these substrates by liquid phase epitaxy. Dislocations in the underlying substrates constitute a major source of defects in epitaxial layers. Also, macroscopic defects in epi layers can be caused by melt carryover during the layer formation process. Finally, another problem, dark spot defects, can result from electromigration of gold. Epitaxial Layer (dpeaa)DE-He213 Liquid Phase Epitaxy (dpeaa)DE-He213 Liquid Phase Epitaxial (dpeaa)DE-He213 Macroscopic Defect (dpeaa)DE-He213 Liquid Encapsulate Czochralski (dpeaa)DE-He213 Keramidas, Vassillis G. aut Wernick, Jack H. aut Enthalten in JOM New York, NY : Springer Science + Business Media, 1989 36(1984), 8 vom: Aug., Seite 37-41 (DE-627)31368197X (DE-600)2002726-6 1543-1851 nnns volume:36 year:1984 number:8 month:08 pages:37-41 https://dx.doi.org/10.1007/BF03338527 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER AR 36 1984 8 08 37-41 |
| language |
English |
| source |
Enthalten in JOM 36(1984), 8 vom: Aug., Seite 37-41 volume:36 year:1984 number:8 month:08 pages:37-41 |
| sourceStr |
Enthalten in JOM 36(1984), 8 vom: Aug., Seite 37-41 volume:36 year:1984 number:8 month:08 pages:37-41 |
| format_phy_str_mv |
Article |
| institution |
findex.gbv.de |
| topic_facet |
Epitaxial Layer Liquid Phase Epitaxy Liquid Phase Epitaxial Macroscopic Defect Liquid Encapsulate Czochralski |
| isfreeaccess_bool |
false |
| container_title |
JOM |
| authorswithroles_txt_mv |
Mahajan, S. @@aut@@ Keramidas, Vassillis G. @@aut@@ Wernick, Jack H. @@aut@@ |
| publishDateDaySort_date |
1984-08-01T00:00:00Z |
| hierarchy_top_id |
31368197X |
| id |
SPR022676422 |
| language_de |
englisch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR022676422</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230330070241.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201006s1984 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/BF03338527</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR022676422</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)BF03338527-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Mahajan, S.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">InP and InGaAsP Semiconducting Materials for Optical Communications</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1984</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© The Minerals, Metals & Materials Society 1984</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Summary A brief overview is presented of materials aspects of InP and InGaAsP compound semiconductors that are being used in state-of-the-art lightwave communication systems. It is feasible to grow high-quality InP single crystals from which suitable substrates can be cut for device growth. Lattice-matched InGaAsP layers of different compositions can be grown on these substrates by liquid phase epitaxy. Dislocations in the underlying substrates constitute a major source of defects in epitaxial layers. Also, macroscopic defects in epi layers can be caused by melt carryover during the layer formation process. Finally, another problem, dark spot defects, can result from electromigration of gold.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Epitaxial Layer</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Liquid Phase Epitaxy</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Liquid Phase Epitaxial</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Macroscopic Defect</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Liquid Encapsulate Czochralski</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Keramidas, Vassillis G.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Wernick, Jack H.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">JOM</subfield><subfield code="d">New York, NY : Springer Science + Business Media, 1989</subfield><subfield code="g">36(1984), 8 vom: Aug., Seite 37-41</subfield><subfield code="w">(DE-627)31368197X</subfield><subfield code="w">(DE-600)2002726-6</subfield><subfield code="x">1543-1851</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:36</subfield><subfield code="g">year:1984</subfield><subfield code="g">number:8</subfield><subfield code="g">month:08</subfield><subfield code="g">pages:37-41</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1007/BF03338527</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">36</subfield><subfield code="j">1984</subfield><subfield code="e">8</subfield><subfield code="c">08</subfield><subfield code="h">37-41</subfield></datafield></record></collection>
|
| author |
Mahajan, S. |
| spellingShingle |
Mahajan, S. misc Epitaxial Layer misc Liquid Phase Epitaxy misc Liquid Phase Epitaxial misc Macroscopic Defect misc Liquid Encapsulate Czochralski InP and InGaAsP Semiconducting Materials for Optical Communications |
| authorStr |
Mahajan, S. |
| ppnlink_with_tag_str_mv |
@@773@@(DE-627)31368197X |
| format |
electronic Article |
| delete_txt_mv |
keep |
| author_role |
aut aut aut |
| collection |
springer |
| remote_str |
true |
| illustrated |
Not Illustrated |
| issn |
1543-1851 |
| topic_title |
InP and InGaAsP Semiconducting Materials for Optical Communications Epitaxial Layer (dpeaa)DE-He213 Liquid Phase Epitaxy (dpeaa)DE-He213 Liquid Phase Epitaxial (dpeaa)DE-He213 Macroscopic Defect (dpeaa)DE-He213 Liquid Encapsulate Czochralski (dpeaa)DE-He213 |
| topic |
misc Epitaxial Layer misc Liquid Phase Epitaxy misc Liquid Phase Epitaxial misc Macroscopic Defect misc Liquid Encapsulate Czochralski |
| topic_unstemmed |
misc Epitaxial Layer misc Liquid Phase Epitaxy misc Liquid Phase Epitaxial misc Macroscopic Defect misc Liquid Encapsulate Czochralski |
| topic_browse |
misc Epitaxial Layer misc Liquid Phase Epitaxy misc Liquid Phase Epitaxial misc Macroscopic Defect misc Liquid Encapsulate Czochralski |
| format_facet |
Elektronische Aufsätze Aufsätze Elektronische Ressource |
| format_main_str_mv |
Text Zeitschrift/Artikel |
| carriertype_str_mv |
cr |
| hierarchy_parent_title |
JOM |
| hierarchy_parent_id |
31368197X |
| hierarchy_top_title |
JOM |
| isfreeaccess_txt |
false |
| familylinks_str_mv |
(DE-627)31368197X (DE-600)2002726-6 |
| title |
InP and InGaAsP Semiconducting Materials for Optical Communications |
| ctrlnum |
(DE-627)SPR022676422 (SPR)BF03338527-e |
| title_full |
InP and InGaAsP Semiconducting Materials for Optical Communications |
| author_sort |
Mahajan, S. |
| journal |
JOM |
| journalStr |
JOM |
| lang_code |
eng |
| isOA_bool |
false |
| recordtype |
marc |
| publishDateSort |
1984 |
| contenttype_str_mv |
txt |
| container_start_page |
37 |
| author_browse |
Mahajan, S. Keramidas, Vassillis G. Wernick, Jack H. |
| container_volume |
36 |
| format_se |
Elektronische Aufsätze |
| author-letter |
Mahajan, S. |
| doi_str_mv |
10.1007/BF03338527 |
| title_sort |
inp and ingaasp semiconducting materials for optical communications |
| title_auth |
InP and InGaAsP Semiconducting Materials for Optical Communications |
| abstract |
Summary A brief overview is presented of materials aspects of InP and InGaAsP compound semiconductors that are being used in state-of-the-art lightwave communication systems. It is feasible to grow high-quality InP single crystals from which suitable substrates can be cut for device growth. Lattice-matched InGaAsP layers of different compositions can be grown on these substrates by liquid phase epitaxy. Dislocations in the underlying substrates constitute a major source of defects in epitaxial layers. Also, macroscopic defects in epi layers can be caused by melt carryover during the layer formation process. Finally, another problem, dark spot defects, can result from electromigration of gold. © The Minerals, Metals & Materials Society 1984 |
| abstractGer |
Summary A brief overview is presented of materials aspects of InP and InGaAsP compound semiconductors that are being used in state-of-the-art lightwave communication systems. It is feasible to grow high-quality InP single crystals from which suitable substrates can be cut for device growth. Lattice-matched InGaAsP layers of different compositions can be grown on these substrates by liquid phase epitaxy. Dislocations in the underlying substrates constitute a major source of defects in epitaxial layers. Also, macroscopic defects in epi layers can be caused by melt carryover during the layer formation process. Finally, another problem, dark spot defects, can result from electromigration of gold. © The Minerals, Metals & Materials Society 1984 |
| abstract_unstemmed |
Summary A brief overview is presented of materials aspects of InP and InGaAsP compound semiconductors that are being used in state-of-the-art lightwave communication systems. It is feasible to grow high-quality InP single crystals from which suitable substrates can be cut for device growth. Lattice-matched InGaAsP layers of different compositions can be grown on these substrates by liquid phase epitaxy. Dislocations in the underlying substrates constitute a major source of defects in epitaxial layers. Also, macroscopic defects in epi layers can be caused by melt carryover during the layer formation process. Finally, another problem, dark spot defects, can result from electromigration of gold. © The Minerals, Metals & Materials Society 1984 |
| collection_details |
GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER |
| container_issue |
8 |
| title_short |
InP and InGaAsP Semiconducting Materials for Optical Communications |
| url |
https://dx.doi.org/10.1007/BF03338527 |
| remote_bool |
true |
| author2 |
Keramidas, Vassillis G. Wernick, Jack H. |
| author2Str |
Keramidas, Vassillis G. Wernick, Jack H. |
| ppnlink |
31368197X |
| mediatype_str_mv |
c |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| doi_str |
10.1007/BF03338527 |
| up_date |
2024-07-03T14:14:01.343Z |
| _version_ |
1803567540576714752 |
| fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR022676422</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230330070241.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201006s1984 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/BF03338527</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR022676422</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)BF03338527-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Mahajan, S.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">InP and InGaAsP Semiconducting Materials for Optical Communications</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1984</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© The Minerals, Metals & Materials Society 1984</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Summary A brief overview is presented of materials aspects of InP and InGaAsP compound semiconductors that are being used in state-of-the-art lightwave communication systems. It is feasible to grow high-quality InP single crystals from which suitable substrates can be cut for device growth. Lattice-matched InGaAsP layers of different compositions can be grown on these substrates by liquid phase epitaxy. Dislocations in the underlying substrates constitute a major source of defects in epitaxial layers. Also, macroscopic defects in epi layers can be caused by melt carryover during the layer formation process. Finally, another problem, dark spot defects, can result from electromigration of gold.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Epitaxial Layer</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Liquid Phase Epitaxy</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Liquid Phase Epitaxial</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Macroscopic Defect</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Liquid Encapsulate Czochralski</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Keramidas, Vassillis G.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Wernick, Jack H.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">JOM</subfield><subfield code="d">New York, NY : Springer Science + Business Media, 1989</subfield><subfield code="g">36(1984), 8 vom: Aug., Seite 37-41</subfield><subfield code="w">(DE-627)31368197X</subfield><subfield code="w">(DE-600)2002726-6</subfield><subfield code="x">1543-1851</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:36</subfield><subfield code="g">year:1984</subfield><subfield code="g">number:8</subfield><subfield code="g">month:08</subfield><subfield code="g">pages:37-41</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1007/BF03338527</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">36</subfield><subfield code="j">1984</subfield><subfield code="e">8</subfield><subfield code="c">08</subfield><subfield code="h">37-41</subfield></datafield></record></collection>
|
| score |
7.39999 |