Pressure-sensitive transistor fabricated from an organic semiconductor 1,1′-dibutyl-4,4′-bipyridinium diiodide
Abstract Although organic semiconductors have attracted extensive interest and been utilized to fabricate a variety of optoelectronic devices, their electrical transportation characteristics under high pressure have rarely been investigated. However, the weak intermolecular interaction of organic se...
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Gespeichert in:
| Autor*in: |
Fu, Xianwei [verfasserIn] Liu, Yang [verfasserIn] Liu, Zhi [verfasserIn] Dong, Ning [verfasserIn] Zhao, Tianyu [verfasserIn] Zhao, Dan [verfasserIn] Lian, Gang [verfasserIn] Wang, Qilong [verfasserIn] Cui, Deliang [verfasserIn] |
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E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2018 |
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| Schlagwörter: |
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Enthalten in: Chemical Research in Chinese Universities - Jilin University and The Editorial Department of Chemical Research in Chinese Universities, 2012, 34(2018), 1 vom: 02. Jan., Seite 95-100 |
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| Übergeordnetes Werk: |
volume:34 ; year:2018 ; number:1 ; day:02 ; month:01 ; pages:95-100 |
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| DOI / URN: |
10.1007/s40242-018-7297-9 |
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SPR032918682 |
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| 520 | |a Abstract Although organic semiconductors have attracted extensive interest and been utilized to fabricate a variety of optoelectronic devices, their electrical transportation characteristics under high pressure have rarely been investigated. However, the weak intermolecular interaction of organic semiconductors endows them with a pressure-sensitive crystal structure and electrical transportation performance, especially the latter. Herein, a new pressure-sensitive transistor was fabricated from an organic semiconductor 1,1′-dibutyl-4,4′-bipyridinium diiodide. It was found that this transistor exhibited increasing resistance as the pressure gradually increased and that it eventually shut off under a pressure of 288 MPa. Such a characteristic makes this organic semiconductor a potential candidate for the use in the fabrication of pressure-sensitive switches and regulators. In addition, these results shed light on the electrical performance of flexible organic optoelectronic devices working under high pressure levels resulted from the bending force. | ||
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| 700 | 1 | |a Wang, Qilong |e verfasserin |4 aut | |
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10.1007/s40242-018-7297-9 doi (DE-627)SPR032918682 (SPR)s40242-018-7297-9-e DE-627 ger DE-627 rakwb eng Fu, Xianwei verfasserin aut Pressure-sensitive transistor fabricated from an organic semiconductor 1,1′-dibutyl-4,4′-bipyridinium diiodide 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Although organic semiconductors have attracted extensive interest and been utilized to fabricate a variety of optoelectronic devices, their electrical transportation characteristics under high pressure have rarely been investigated. However, the weak intermolecular interaction of organic semiconductors endows them with a pressure-sensitive crystal structure and electrical transportation performance, especially the latter. Herein, a new pressure-sensitive transistor was fabricated from an organic semiconductor 1,1′-dibutyl-4,4′-bipyridinium diiodide. It was found that this transistor exhibited increasing resistance as the pressure gradually increased and that it eventually shut off under a pressure of 288 MPa. Such a characteristic makes this organic semiconductor a potential candidate for the use in the fabrication of pressure-sensitive switches and regulators. In addition, these results shed light on the electrical performance of flexible organic optoelectronic devices working under high pressure levels resulted from the bending force. Pressure-sensitive transistor (dpeaa)DE-He213 Organic semiconductor (dpeaa)DE-He213 High-pressure (dpeaa)DE-He213 Thermal stability (dpeaa)DE-He213 Liu, Yang verfasserin aut Liu, Zhi verfasserin aut Dong, Ning verfasserin aut Zhao, Tianyu verfasserin aut Zhao, Dan verfasserin aut Lian, Gang verfasserin aut Wang, Qilong verfasserin aut Cui, Deliang verfasserin aut Enthalten in Chemical Research in Chinese Universities Jilin University and The Editorial Department of Chemical Research in Chinese Universities, 2012 34(2018), 1 vom: 02. Jan., Seite 95-100 (DE-627)SPR03290777X nnns volume:34 year:2018 number:1 day:02 month:01 pages:95-100 https://dx.doi.org/10.1007/s40242-018-7297-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA AR 34 2018 1 02 01 95-100 |
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10.1007/s40242-018-7297-9 doi (DE-627)SPR032918682 (SPR)s40242-018-7297-9-e DE-627 ger DE-627 rakwb eng Fu, Xianwei verfasserin aut Pressure-sensitive transistor fabricated from an organic semiconductor 1,1′-dibutyl-4,4′-bipyridinium diiodide 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Although organic semiconductors have attracted extensive interest and been utilized to fabricate a variety of optoelectronic devices, their electrical transportation characteristics under high pressure have rarely been investigated. However, the weak intermolecular interaction of organic semiconductors endows them with a pressure-sensitive crystal structure and electrical transportation performance, especially the latter. Herein, a new pressure-sensitive transistor was fabricated from an organic semiconductor 1,1′-dibutyl-4,4′-bipyridinium diiodide. It was found that this transistor exhibited increasing resistance as the pressure gradually increased and that it eventually shut off under a pressure of 288 MPa. Such a characteristic makes this organic semiconductor a potential candidate for the use in the fabrication of pressure-sensitive switches and regulators. In addition, these results shed light on the electrical performance of flexible organic optoelectronic devices working under high pressure levels resulted from the bending force. Pressure-sensitive transistor (dpeaa)DE-He213 Organic semiconductor (dpeaa)DE-He213 High-pressure (dpeaa)DE-He213 Thermal stability (dpeaa)DE-He213 Liu, Yang verfasserin aut Liu, Zhi verfasserin aut Dong, Ning verfasserin aut Zhao, Tianyu verfasserin aut Zhao, Dan verfasserin aut Lian, Gang verfasserin aut Wang, Qilong verfasserin aut Cui, Deliang verfasserin aut Enthalten in Chemical Research in Chinese Universities Jilin University and The Editorial Department of Chemical Research in Chinese Universities, 2012 34(2018), 1 vom: 02. Jan., Seite 95-100 (DE-627)SPR03290777X nnns volume:34 year:2018 number:1 day:02 month:01 pages:95-100 https://dx.doi.org/10.1007/s40242-018-7297-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA AR 34 2018 1 02 01 95-100 |
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10.1007/s40242-018-7297-9 doi (DE-627)SPR032918682 (SPR)s40242-018-7297-9-e DE-627 ger DE-627 rakwb eng Fu, Xianwei verfasserin aut Pressure-sensitive transistor fabricated from an organic semiconductor 1,1′-dibutyl-4,4′-bipyridinium diiodide 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Although organic semiconductors have attracted extensive interest and been utilized to fabricate a variety of optoelectronic devices, their electrical transportation characteristics under high pressure have rarely been investigated. However, the weak intermolecular interaction of organic semiconductors endows them with a pressure-sensitive crystal structure and electrical transportation performance, especially the latter. Herein, a new pressure-sensitive transistor was fabricated from an organic semiconductor 1,1′-dibutyl-4,4′-bipyridinium diiodide. It was found that this transistor exhibited increasing resistance as the pressure gradually increased and that it eventually shut off under a pressure of 288 MPa. Such a characteristic makes this organic semiconductor a potential candidate for the use in the fabrication of pressure-sensitive switches and regulators. In addition, these results shed light on the electrical performance of flexible organic optoelectronic devices working under high pressure levels resulted from the bending force. Pressure-sensitive transistor (dpeaa)DE-He213 Organic semiconductor (dpeaa)DE-He213 High-pressure (dpeaa)DE-He213 Thermal stability (dpeaa)DE-He213 Liu, Yang verfasserin aut Liu, Zhi verfasserin aut Dong, Ning verfasserin aut Zhao, Tianyu verfasserin aut Zhao, Dan verfasserin aut Lian, Gang verfasserin aut Wang, Qilong verfasserin aut Cui, Deliang verfasserin aut Enthalten in Chemical Research in Chinese Universities Jilin University and The Editorial Department of Chemical Research in Chinese Universities, 2012 34(2018), 1 vom: 02. Jan., Seite 95-100 (DE-627)SPR03290777X nnns volume:34 year:2018 number:1 day:02 month:01 pages:95-100 https://dx.doi.org/10.1007/s40242-018-7297-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA AR 34 2018 1 02 01 95-100 |
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10.1007/s40242-018-7297-9 doi (DE-627)SPR032918682 (SPR)s40242-018-7297-9-e DE-627 ger DE-627 rakwb eng Fu, Xianwei verfasserin aut Pressure-sensitive transistor fabricated from an organic semiconductor 1,1′-dibutyl-4,4′-bipyridinium diiodide 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Although organic semiconductors have attracted extensive interest and been utilized to fabricate a variety of optoelectronic devices, their electrical transportation characteristics under high pressure have rarely been investigated. However, the weak intermolecular interaction of organic semiconductors endows them with a pressure-sensitive crystal structure and electrical transportation performance, especially the latter. Herein, a new pressure-sensitive transistor was fabricated from an organic semiconductor 1,1′-dibutyl-4,4′-bipyridinium diiodide. It was found that this transistor exhibited increasing resistance as the pressure gradually increased and that it eventually shut off under a pressure of 288 MPa. Such a characteristic makes this organic semiconductor a potential candidate for the use in the fabrication of pressure-sensitive switches and regulators. In addition, these results shed light on the electrical performance of flexible organic optoelectronic devices working under high pressure levels resulted from the bending force. Pressure-sensitive transistor (dpeaa)DE-He213 Organic semiconductor (dpeaa)DE-He213 High-pressure (dpeaa)DE-He213 Thermal stability (dpeaa)DE-He213 Liu, Yang verfasserin aut Liu, Zhi verfasserin aut Dong, Ning verfasserin aut Zhao, Tianyu verfasserin aut Zhao, Dan verfasserin aut Lian, Gang verfasserin aut Wang, Qilong verfasserin aut Cui, Deliang verfasserin aut Enthalten in Chemical Research in Chinese Universities Jilin University and The Editorial Department of Chemical Research in Chinese Universities, 2012 34(2018), 1 vom: 02. Jan., Seite 95-100 (DE-627)SPR03290777X nnns volume:34 year:2018 number:1 day:02 month:01 pages:95-100 https://dx.doi.org/10.1007/s40242-018-7297-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA AR 34 2018 1 02 01 95-100 |
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10.1007/s40242-018-7297-9 doi (DE-627)SPR032918682 (SPR)s40242-018-7297-9-e DE-627 ger DE-627 rakwb eng Fu, Xianwei verfasserin aut Pressure-sensitive transistor fabricated from an organic semiconductor 1,1′-dibutyl-4,4′-bipyridinium diiodide 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Although organic semiconductors have attracted extensive interest and been utilized to fabricate a variety of optoelectronic devices, their electrical transportation characteristics under high pressure have rarely been investigated. However, the weak intermolecular interaction of organic semiconductors endows them with a pressure-sensitive crystal structure and electrical transportation performance, especially the latter. Herein, a new pressure-sensitive transistor was fabricated from an organic semiconductor 1,1′-dibutyl-4,4′-bipyridinium diiodide. It was found that this transistor exhibited increasing resistance as the pressure gradually increased and that it eventually shut off under a pressure of 288 MPa. Such a characteristic makes this organic semiconductor a potential candidate for the use in the fabrication of pressure-sensitive switches and regulators. In addition, these results shed light on the electrical performance of flexible organic optoelectronic devices working under high pressure levels resulted from the bending force. Pressure-sensitive transistor (dpeaa)DE-He213 Organic semiconductor (dpeaa)DE-He213 High-pressure (dpeaa)DE-He213 Thermal stability (dpeaa)DE-He213 Liu, Yang verfasserin aut Liu, Zhi verfasserin aut Dong, Ning verfasserin aut Zhao, Tianyu verfasserin aut Zhao, Dan verfasserin aut Lian, Gang verfasserin aut Wang, Qilong verfasserin aut Cui, Deliang verfasserin aut Enthalten in Chemical Research in Chinese Universities Jilin University and The Editorial Department of Chemical Research in Chinese Universities, 2012 34(2018), 1 vom: 02. Jan., Seite 95-100 (DE-627)SPR03290777X nnns volume:34 year:2018 number:1 day:02 month:01 pages:95-100 https://dx.doi.org/10.1007/s40242-018-7297-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA AR 34 2018 1 02 01 95-100 |
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Pressure-sensitive transistor fabricated from an organic semiconductor 1,1′-dibutyl-4,4′-bipyridinium diiodide |
| abstract |
Abstract Although organic semiconductors have attracted extensive interest and been utilized to fabricate a variety of optoelectronic devices, their electrical transportation characteristics under high pressure have rarely been investigated. However, the weak intermolecular interaction of organic semiconductors endows them with a pressure-sensitive crystal structure and electrical transportation performance, especially the latter. Herein, a new pressure-sensitive transistor was fabricated from an organic semiconductor 1,1′-dibutyl-4,4′-bipyridinium diiodide. It was found that this transistor exhibited increasing resistance as the pressure gradually increased and that it eventually shut off under a pressure of 288 MPa. Such a characteristic makes this organic semiconductor a potential candidate for the use in the fabrication of pressure-sensitive switches and regulators. In addition, these results shed light on the electrical performance of flexible organic optoelectronic devices working under high pressure levels resulted from the bending force. |
| abstractGer |
Abstract Although organic semiconductors have attracted extensive interest and been utilized to fabricate a variety of optoelectronic devices, their electrical transportation characteristics under high pressure have rarely been investigated. However, the weak intermolecular interaction of organic semiconductors endows them with a pressure-sensitive crystal structure and electrical transportation performance, especially the latter. Herein, a new pressure-sensitive transistor was fabricated from an organic semiconductor 1,1′-dibutyl-4,4′-bipyridinium diiodide. It was found that this transistor exhibited increasing resistance as the pressure gradually increased and that it eventually shut off under a pressure of 288 MPa. Such a characteristic makes this organic semiconductor a potential candidate for the use in the fabrication of pressure-sensitive switches and regulators. In addition, these results shed light on the electrical performance of flexible organic optoelectronic devices working under high pressure levels resulted from the bending force. |
| abstract_unstemmed |
Abstract Although organic semiconductors have attracted extensive interest and been utilized to fabricate a variety of optoelectronic devices, their electrical transportation characteristics under high pressure have rarely been investigated. However, the weak intermolecular interaction of organic semiconductors endows them with a pressure-sensitive crystal structure and electrical transportation performance, especially the latter. Herein, a new pressure-sensitive transistor was fabricated from an organic semiconductor 1,1′-dibutyl-4,4′-bipyridinium diiodide. It was found that this transistor exhibited increasing resistance as the pressure gradually increased and that it eventually shut off under a pressure of 288 MPa. Such a characteristic makes this organic semiconductor a potential candidate for the use in the fabrication of pressure-sensitive switches and regulators. In addition, these results shed light on the electrical performance of flexible organic optoelectronic devices working under high pressure levels resulted from the bending force. |
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| container_issue |
1 |
| title_short |
Pressure-sensitive transistor fabricated from an organic semiconductor 1,1′-dibutyl-4,4′-bipyridinium diiodide |
| url |
https://dx.doi.org/10.1007/s40242-018-7297-9 |
| remote_bool |
true |
| author2 |
Liu, Yang Liu, Zhi Dong, Ning Zhao, Tianyu Zhao, Dan Lian, Gang Wang, Qilong Cui, Deliang |
| author2Str |
Liu, Yang Liu, Zhi Dong, Ning Zhao, Tianyu Zhao, Dan Lian, Gang Wang, Qilong Cui, Deliang |
| ppnlink |
SPR03290777X |
| mediatype_str_mv |
c |
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false |
| hochschulschrift_bool |
false |
| doi_str |
10.1007/s40242-018-7297-9 |
| up_date |
2024-07-03T15:27:11.662Z |
| _version_ |
1803572144151461888 |
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|
| score |
7.4011784 |