Amorphous Silicon-Carbon Thin Film P-I-N Structures for Liquid-Crystal Spatial Light Modulators
Abstract Photoaddressed spatial light modulators (PSLM) based on nematic liquid crystals using hydrogenated amorphous silicon-carbon films (a-$ Si_{1–x} %$ C_{x} $:H) and p-i-n structures as photosensitive layers are designed and studied. It is shown that an application of a-$ Si_{1–x} %$ C_{x} $:H...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Feoktistov, N. A. [verfasserIn] Ivanova, N. L. [verfasserIn] Morozova, L. E. [verfasserIn] Nikulin, Yu. A. [verfasserIn] Onokhov, A. P. [verfasserIn] Pevtsov, A. B. [verfasserIn] Schwarz, R. [verfasserIn] |
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E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
1996 |
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Enthalten in: MRS online proceedings library - Warrendale, Pa. : MRS, 1998, 420(1996), 1 vom: Dez., Seite 189-194 |
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volume:420 ; year:1996 ; number:1 ; month:12 ; pages:189-194 |
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| DOI / URN: |
10.1557/PROC-420-189 |
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SPR041612949 |
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| 520 | |a Abstract Photoaddressed spatial light modulators (PSLM) based on nematic liquid crystals using hydrogenated amorphous silicon-carbon films (a-$ Si_{1–x} %$ C_{x} $:H) and p-i-n structures as photosensitive layers are designed and studied. It is shown that an application of a-$ Si_{1–x} %$ C_{x} $:H p-i-n diodes greatly improved the operation speed of a PSLM, increased the film transparency and decreased the absorption of the red readout light. As a result, the readout light intensity could become ≈ 20 times larger. The maximum diffraction efficiency of the PSLM was achieved for a write-in light intensity of 40µW/$ cm^{2} $, with a resolution (FWHM) of the diffraction efficiency of 54 $ mm^{−1} $. The optical response of the PSLM was observed in the frequency range from 1 Hz to 100 Hz. | ||
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10.1557/PROC-420-189 doi (DE-627)SPR041612949 (SPR)PROC-420-189-e DE-627 ger DE-627 rakwb eng 670 ASE Feoktistov, N. A. verfasserin aut Amorphous Silicon-Carbon Thin Film P-I-N Structures for Liquid-Crystal Spatial Light Modulators 1996 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Photoaddressed spatial light modulators (PSLM) based on nematic liquid crystals using hydrogenated amorphous silicon-carbon films (a-$ Si_{1–x} %$ C_{x} $:H) and p-i-n structures as photosensitive layers are designed and studied. It is shown that an application of a-$ Si_{1–x} %$ C_{x} $:H p-i-n diodes greatly improved the operation speed of a PSLM, increased the film transparency and decreased the absorption of the red readout light. As a result, the readout light intensity could become ≈ 20 times larger. The maximum diffraction efficiency of the PSLM was achieved for a write-in light intensity of 40µW/$ cm^{2} $, with a resolution (FWHM) of the diffraction efficiency of 54 $ mm^{−1} $. The optical response of the PSLM was observed in the frequency range from 1 Hz to 100 Hz. Ivanova, N. L. verfasserin aut Morozova, L. E. verfasserin aut Nikulin, Yu. A. verfasserin aut Onokhov, A. P. verfasserin aut Pevtsov, A. B. verfasserin aut Schwarz, R. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 420(1996), 1 vom: Dez., Seite 189-194 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:420 year:1996 number:1 month:12 pages:189-194 https://dx.doi.org/10.1557/PROC-420-189 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 420 1996 1 12 189-194 |
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10.1557/PROC-420-189 doi (DE-627)SPR041612949 (SPR)PROC-420-189-e DE-627 ger DE-627 rakwb eng 670 ASE Feoktistov, N. A. verfasserin aut Amorphous Silicon-Carbon Thin Film P-I-N Structures for Liquid-Crystal Spatial Light Modulators 1996 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Photoaddressed spatial light modulators (PSLM) based on nematic liquid crystals using hydrogenated amorphous silicon-carbon films (a-$ Si_{1–x} %$ C_{x} $:H) and p-i-n structures as photosensitive layers are designed and studied. It is shown that an application of a-$ Si_{1–x} %$ C_{x} $:H p-i-n diodes greatly improved the operation speed of a PSLM, increased the film transparency and decreased the absorption of the red readout light. As a result, the readout light intensity could become ≈ 20 times larger. The maximum diffraction efficiency of the PSLM was achieved for a write-in light intensity of 40µW/$ cm^{2} $, with a resolution (FWHM) of the diffraction efficiency of 54 $ mm^{−1} $. The optical response of the PSLM was observed in the frequency range from 1 Hz to 100 Hz. Ivanova, N. L. verfasserin aut Morozova, L. E. verfasserin aut Nikulin, Yu. A. verfasserin aut Onokhov, A. P. verfasserin aut Pevtsov, A. B. verfasserin aut Schwarz, R. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 420(1996), 1 vom: Dez., Seite 189-194 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:420 year:1996 number:1 month:12 pages:189-194 https://dx.doi.org/10.1557/PROC-420-189 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 420 1996 1 12 189-194 |
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10.1557/PROC-420-189 doi (DE-627)SPR041612949 (SPR)PROC-420-189-e DE-627 ger DE-627 rakwb eng 670 ASE Feoktistov, N. A. verfasserin aut Amorphous Silicon-Carbon Thin Film P-I-N Structures for Liquid-Crystal Spatial Light Modulators 1996 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Photoaddressed spatial light modulators (PSLM) based on nematic liquid crystals using hydrogenated amorphous silicon-carbon films (a-$ Si_{1–x} %$ C_{x} $:H) and p-i-n structures as photosensitive layers are designed and studied. It is shown that an application of a-$ Si_{1–x} %$ C_{x} $:H p-i-n diodes greatly improved the operation speed of a PSLM, increased the film transparency and decreased the absorption of the red readout light. As a result, the readout light intensity could become ≈ 20 times larger. The maximum diffraction efficiency of the PSLM was achieved for a write-in light intensity of 40µW/$ cm^{2} $, with a resolution (FWHM) of the diffraction efficiency of 54 $ mm^{−1} $. The optical response of the PSLM was observed in the frequency range from 1 Hz to 100 Hz. Ivanova, N. L. verfasserin aut Morozova, L. E. verfasserin aut Nikulin, Yu. A. verfasserin aut Onokhov, A. P. verfasserin aut Pevtsov, A. B. verfasserin aut Schwarz, R. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 420(1996), 1 vom: Dez., Seite 189-194 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:420 year:1996 number:1 month:12 pages:189-194 https://dx.doi.org/10.1557/PROC-420-189 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 420 1996 1 12 189-194 |
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10.1557/PROC-420-189 doi (DE-627)SPR041612949 (SPR)PROC-420-189-e DE-627 ger DE-627 rakwb eng 670 ASE Feoktistov, N. A. verfasserin aut Amorphous Silicon-Carbon Thin Film P-I-N Structures for Liquid-Crystal Spatial Light Modulators 1996 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Photoaddressed spatial light modulators (PSLM) based on nematic liquid crystals using hydrogenated amorphous silicon-carbon films (a-$ Si_{1–x} %$ C_{x} $:H) and p-i-n structures as photosensitive layers are designed and studied. It is shown that an application of a-$ Si_{1–x} %$ C_{x} $:H p-i-n diodes greatly improved the operation speed of a PSLM, increased the film transparency and decreased the absorption of the red readout light. As a result, the readout light intensity could become ≈ 20 times larger. The maximum diffraction efficiency of the PSLM was achieved for a write-in light intensity of 40µW/$ cm^{2} $, with a resolution (FWHM) of the diffraction efficiency of 54 $ mm^{−1} $. The optical response of the PSLM was observed in the frequency range from 1 Hz to 100 Hz. Ivanova, N. L. verfasserin aut Morozova, L. E. verfasserin aut Nikulin, Yu. A. verfasserin aut Onokhov, A. P. verfasserin aut Pevtsov, A. B. verfasserin aut Schwarz, R. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 420(1996), 1 vom: Dez., Seite 189-194 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:420 year:1996 number:1 month:12 pages:189-194 https://dx.doi.org/10.1557/PROC-420-189 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 420 1996 1 12 189-194 |
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10.1557/PROC-420-189 doi (DE-627)SPR041612949 (SPR)PROC-420-189-e DE-627 ger DE-627 rakwb eng 670 ASE Feoktistov, N. A. verfasserin aut Amorphous Silicon-Carbon Thin Film P-I-N Structures for Liquid-Crystal Spatial Light Modulators 1996 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Photoaddressed spatial light modulators (PSLM) based on nematic liquid crystals using hydrogenated amorphous silicon-carbon films (a-$ Si_{1–x} %$ C_{x} $:H) and p-i-n structures as photosensitive layers are designed and studied. It is shown that an application of a-$ Si_{1–x} %$ C_{x} $:H p-i-n diodes greatly improved the operation speed of a PSLM, increased the film transparency and decreased the absorption of the red readout light. As a result, the readout light intensity could become ≈ 20 times larger. The maximum diffraction efficiency of the PSLM was achieved for a write-in light intensity of 40µW/$ cm^{2} $, with a resolution (FWHM) of the diffraction efficiency of 54 $ mm^{−1} $. The optical response of the PSLM was observed in the frequency range from 1 Hz to 100 Hz. Ivanova, N. L. verfasserin aut Morozova, L. E. verfasserin aut Nikulin, Yu. A. verfasserin aut Onokhov, A. P. verfasserin aut Pevtsov, A. B. verfasserin aut Schwarz, R. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 420(1996), 1 vom: Dez., Seite 189-194 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:420 year:1996 number:1 month:12 pages:189-194 https://dx.doi.org/10.1557/PROC-420-189 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 420 1996 1 12 189-194 |
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Amorphous Silicon-Carbon Thin Film P-I-N Structures for Liquid-Crystal Spatial Light Modulators |
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Abstract Photoaddressed spatial light modulators (PSLM) based on nematic liquid crystals using hydrogenated amorphous silicon-carbon films (a-$ Si_{1–x} %$ C_{x} $:H) and p-i-n structures as photosensitive layers are designed and studied. It is shown that an application of a-$ Si_{1–x} %$ C_{x} $:H p-i-n diodes greatly improved the operation speed of a PSLM, increased the film transparency and decreased the absorption of the red readout light. As a result, the readout light intensity could become ≈ 20 times larger. The maximum diffraction efficiency of the PSLM was achieved for a write-in light intensity of 40µW/$ cm^{2} $, with a resolution (FWHM) of the diffraction efficiency of 54 $ mm^{−1} $. The optical response of the PSLM was observed in the frequency range from 1 Hz to 100 Hz. |
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Abstract Photoaddressed spatial light modulators (PSLM) based on nematic liquid crystals using hydrogenated amorphous silicon-carbon films (a-$ Si_{1–x} %$ C_{x} $:H) and p-i-n structures as photosensitive layers are designed and studied. It is shown that an application of a-$ Si_{1–x} %$ C_{x} $:H p-i-n diodes greatly improved the operation speed of a PSLM, increased the film transparency and decreased the absorption of the red readout light. As a result, the readout light intensity could become ≈ 20 times larger. The maximum diffraction efficiency of the PSLM was achieved for a write-in light intensity of 40µW/$ cm^{2} $, with a resolution (FWHM) of the diffraction efficiency of 54 $ mm^{−1} $. The optical response of the PSLM was observed in the frequency range from 1 Hz to 100 Hz. |
| abstract_unstemmed |
Abstract Photoaddressed spatial light modulators (PSLM) based on nematic liquid crystals using hydrogenated amorphous silicon-carbon films (a-$ Si_{1–x} %$ C_{x} $:H) and p-i-n structures as photosensitive layers are designed and studied. It is shown that an application of a-$ Si_{1–x} %$ C_{x} $:H p-i-n diodes greatly improved the operation speed of a PSLM, increased the film transparency and decreased the absorption of the red readout light. As a result, the readout light intensity could become ≈ 20 times larger. The maximum diffraction efficiency of the PSLM was achieved for a write-in light intensity of 40µW/$ cm^{2} $, with a resolution (FWHM) of the diffraction efficiency of 54 $ mm^{−1} $. The optical response of the PSLM was observed in the frequency range from 1 Hz to 100 Hz. |
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Amorphous Silicon-Carbon Thin Film P-I-N Structures for Liquid-Crystal Spatial Light Modulators |
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https://dx.doi.org/10.1557/PROC-420-189 |
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| author2 |
Ivanova, N. L. Morozova, L. E. Nikulin, Yu. A. Onokhov, A. P. Pevtsov, A. B. Schwarz, R. |
| author2Str |
Ivanova, N. L. Morozova, L. E. Nikulin, Yu. A. Onokhov, A. P. Pevtsov, A. B. Schwarz, R. |
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57782046X |
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c |
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| doi_str |
10.1557/PROC-420-189 |
| up_date |
2024-07-03T22:52:32.322Z |
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1803600162794242048 |
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A.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Amorphous Silicon-Carbon Thin Film P-I-N Structures for Liquid-Crystal Spatial Light Modulators</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1996</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Photoaddressed spatial light modulators (PSLM) based on nematic liquid crystals using hydrogenated amorphous silicon-carbon films (a-$ Si_{1–x} %$ C_{x} $:H) and p-i-n structures as photosensitive layers are designed and studied. 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7.40086 |