2D-polyimide film sensitized monolayer $ MoS_{2} $ phototransistor enabled near-infrared photodetection
Abstract Two-dimensional (2D) transition metal dichalcogenides (TMDCs)-based heterostructures open the door to fabricate various promising hybrid photodetectors, while it is still a challenge to achieve excellent and stable near-infrared (NIR) photoresponse. Here, a $ MoS_{2} $—2DPI (2D-polyimide (2...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Luo, Qingqing [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2022 |
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| Schlagwörter: |
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| Anmerkung: |
© Tsinghua University Press 2022 |
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| Übergeordnetes Werk: |
Enthalten in: Nano research - [S.l.] : Tsinghua Press, 2008, 15(2022), 9 vom: 15. Juni, Seite 8428-8434 |
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| Übergeordnetes Werk: |
volume:15 ; year:2022 ; number:9 ; day:15 ; month:06 ; pages:8428-8434 |
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| DOI / URN: |
10.1007/s12274-022-4438-8 |
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| Katalog-ID: |
SPR050930575 |
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| 245 | 1 | 0 | |a 2D-polyimide film sensitized monolayer $ MoS_{2} $ phototransistor enabled near-infrared photodetection |
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| 520 | |a Abstract Two-dimensional (2D) transition metal dichalcogenides (TMDCs)-based heterostructures open the door to fabricate various promising hybrid photodetectors, while it is still a challenge to achieve excellent and stable near-infrared (NIR) photoresponse. Here, a $ MoS_{2} $—2DPI (2D-polyimide (2DPI)) heterojunction-based phototransistor (HPT) was fabricated. Near-infrared photodetection with excellent performance has been realized. This HPT exhibited a photoresponsivity of 390.5 A/W, a specific detectivity of 5.10 × $ 10^{12} $ Jones, a photogain 1.04 × $ 10^{5} $, and a photoresponse rise and decay time of 400 and 430 ms (λ = 900 nm, P = 16.2 µW/$ cm^{2} $), respectively. It also shows a broadband wavelength response from 405 to 1,020 nm. This superior performance could be attributed to the strong near-infrared absorption and the type-II (staggered) band alignment which ensures efficient charge transfer from 2DPI to $ MoS_{2} $. The face-to-face spatial configuration of $ MoS_{2} $—2DPI heterostructures ensures efficient transfer of photoinduced carriers through the interface, electron and holes can be separated due to the large band offsets. This work presents a significant step for the manipulation of high-performance NIR photodetector of two-dimensional covalent organic polymer-sensitized monolayer TMDCs. | ||
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| 650 | 4 | |a polyimide film |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a heterojunction |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a near-infrared phototransistor |7 (dpeaa)DE-He213 | |
| 700 | 1 | |a Feng, Guangyuan |4 aut | |
| 700 | 1 | |a Song, Yaru |4 aut | |
| 700 | 1 | |a Zhang, Enbing |4 aut | |
| 700 | 1 | |a Yuan, Jiangyan |4 aut | |
| 700 | 1 | |a Fa, Dejuan |4 aut | |
| 700 | 1 | |a Sun, Qisheng |4 aut | |
| 700 | 1 | |a Lei, Shengbin |4 aut | |
| 700 | 1 | |a Hu, Wenping |4 aut | |
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10.1007/s12274-022-4438-8 doi (DE-627)SPR050930575 (SPR)s12274-022-4438-8-e DE-627 ger DE-627 rakwb eng Luo, Qingqing verfasserin aut 2D-polyimide film sensitized monolayer $ MoS_{2} $ phototransistor enabled near-infrared photodetection 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Tsinghua University Press 2022 Abstract Two-dimensional (2D) transition metal dichalcogenides (TMDCs)-based heterostructures open the door to fabricate various promising hybrid photodetectors, while it is still a challenge to achieve excellent and stable near-infrared (NIR) photoresponse. Here, a $ MoS_{2} $—2DPI (2D-polyimide (2DPI)) heterojunction-based phototransistor (HPT) was fabricated. Near-infrared photodetection with excellent performance has been realized. This HPT exhibited a photoresponsivity of 390.5 A/W, a specific detectivity of 5.10 × $ 10^{12} $ Jones, a photogain 1.04 × $ 10^{5} $, and a photoresponse rise and decay time of 400 and 430 ms (λ = 900 nm, P = 16.2 µW/$ cm^{2} $), respectively. It also shows a broadband wavelength response from 405 to 1,020 nm. This superior performance could be attributed to the strong near-infrared absorption and the type-II (staggered) band alignment which ensures efficient charge transfer from 2DPI to $ MoS_{2} $. The face-to-face spatial configuration of $ MoS_{2} $—2DPI heterostructures ensures efficient transfer of photoinduced carriers through the interface, electron and holes can be separated due to the large band offsets. This work presents a significant step for the manipulation of high-performance NIR photodetector of two-dimensional covalent organic polymer-sensitized monolayer TMDCs. MoS (dpeaa)DE-He213 polyimide film (dpeaa)DE-He213 heterojunction (dpeaa)DE-He213 near-infrared phototransistor (dpeaa)DE-He213 Feng, Guangyuan aut Song, Yaru aut Zhang, Enbing aut Yuan, Jiangyan aut Fa, Dejuan aut Sun, Qisheng aut Lei, Shengbin aut Hu, Wenping aut Enthalten in Nano research [S.l.] : Tsinghua Press, 2008 15(2022), 9 vom: 15. Juni, Seite 8428-8434 (DE-627)57375361X (DE-600)2442216-2 1998-0000 nnns volume:15 year:2022 number:9 day:15 month:06 pages:8428-8434 https://dx.doi.org/10.1007/s12274-022-4438-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 15 2022 9 15 06 8428-8434 |
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10.1007/s12274-022-4438-8 doi (DE-627)SPR050930575 (SPR)s12274-022-4438-8-e DE-627 ger DE-627 rakwb eng Luo, Qingqing verfasserin aut 2D-polyimide film sensitized monolayer $ MoS_{2} $ phototransistor enabled near-infrared photodetection 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Tsinghua University Press 2022 Abstract Two-dimensional (2D) transition metal dichalcogenides (TMDCs)-based heterostructures open the door to fabricate various promising hybrid photodetectors, while it is still a challenge to achieve excellent and stable near-infrared (NIR) photoresponse. Here, a $ MoS_{2} $—2DPI (2D-polyimide (2DPI)) heterojunction-based phototransistor (HPT) was fabricated. Near-infrared photodetection with excellent performance has been realized. This HPT exhibited a photoresponsivity of 390.5 A/W, a specific detectivity of 5.10 × $ 10^{12} $ Jones, a photogain 1.04 × $ 10^{5} $, and a photoresponse rise and decay time of 400 and 430 ms (λ = 900 nm, P = 16.2 µW/$ cm^{2} $), respectively. It also shows a broadband wavelength response from 405 to 1,020 nm. This superior performance could be attributed to the strong near-infrared absorption and the type-II (staggered) band alignment which ensures efficient charge transfer from 2DPI to $ MoS_{2} $. The face-to-face spatial configuration of $ MoS_{2} $—2DPI heterostructures ensures efficient transfer of photoinduced carriers through the interface, electron and holes can be separated due to the large band offsets. This work presents a significant step for the manipulation of high-performance NIR photodetector of two-dimensional covalent organic polymer-sensitized monolayer TMDCs. MoS (dpeaa)DE-He213 polyimide film (dpeaa)DE-He213 heterojunction (dpeaa)DE-He213 near-infrared phototransistor (dpeaa)DE-He213 Feng, Guangyuan aut Song, Yaru aut Zhang, Enbing aut Yuan, Jiangyan aut Fa, Dejuan aut Sun, Qisheng aut Lei, Shengbin aut Hu, Wenping aut Enthalten in Nano research [S.l.] : Tsinghua Press, 2008 15(2022), 9 vom: 15. Juni, Seite 8428-8434 (DE-627)57375361X (DE-600)2442216-2 1998-0000 nnns volume:15 year:2022 number:9 day:15 month:06 pages:8428-8434 https://dx.doi.org/10.1007/s12274-022-4438-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 15 2022 9 15 06 8428-8434 |
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10.1007/s12274-022-4438-8 doi (DE-627)SPR050930575 (SPR)s12274-022-4438-8-e DE-627 ger DE-627 rakwb eng Luo, Qingqing verfasserin aut 2D-polyimide film sensitized monolayer $ MoS_{2} $ phototransistor enabled near-infrared photodetection 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Tsinghua University Press 2022 Abstract Two-dimensional (2D) transition metal dichalcogenides (TMDCs)-based heterostructures open the door to fabricate various promising hybrid photodetectors, while it is still a challenge to achieve excellent and stable near-infrared (NIR) photoresponse. Here, a $ MoS_{2} $—2DPI (2D-polyimide (2DPI)) heterojunction-based phototransistor (HPT) was fabricated. Near-infrared photodetection with excellent performance has been realized. This HPT exhibited a photoresponsivity of 390.5 A/W, a specific detectivity of 5.10 × $ 10^{12} $ Jones, a photogain 1.04 × $ 10^{5} $, and a photoresponse rise and decay time of 400 and 430 ms (λ = 900 nm, P = 16.2 µW/$ cm^{2} $), respectively. It also shows a broadband wavelength response from 405 to 1,020 nm. This superior performance could be attributed to the strong near-infrared absorption and the type-II (staggered) band alignment which ensures efficient charge transfer from 2DPI to $ MoS_{2} $. The face-to-face spatial configuration of $ MoS_{2} $—2DPI heterostructures ensures efficient transfer of photoinduced carriers through the interface, electron and holes can be separated due to the large band offsets. This work presents a significant step for the manipulation of high-performance NIR photodetector of two-dimensional covalent organic polymer-sensitized monolayer TMDCs. MoS (dpeaa)DE-He213 polyimide film (dpeaa)DE-He213 heterojunction (dpeaa)DE-He213 near-infrared phototransistor (dpeaa)DE-He213 Feng, Guangyuan aut Song, Yaru aut Zhang, Enbing aut Yuan, Jiangyan aut Fa, Dejuan aut Sun, Qisheng aut Lei, Shengbin aut Hu, Wenping aut Enthalten in Nano research [S.l.] : Tsinghua Press, 2008 15(2022), 9 vom: 15. Juni, Seite 8428-8434 (DE-627)57375361X (DE-600)2442216-2 1998-0000 nnns volume:15 year:2022 number:9 day:15 month:06 pages:8428-8434 https://dx.doi.org/10.1007/s12274-022-4438-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 15 2022 9 15 06 8428-8434 |
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10.1007/s12274-022-4438-8 doi (DE-627)SPR050930575 (SPR)s12274-022-4438-8-e DE-627 ger DE-627 rakwb eng Luo, Qingqing verfasserin aut 2D-polyimide film sensitized monolayer $ MoS_{2} $ phototransistor enabled near-infrared photodetection 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Tsinghua University Press 2022 Abstract Two-dimensional (2D) transition metal dichalcogenides (TMDCs)-based heterostructures open the door to fabricate various promising hybrid photodetectors, while it is still a challenge to achieve excellent and stable near-infrared (NIR) photoresponse. Here, a $ MoS_{2} $—2DPI (2D-polyimide (2DPI)) heterojunction-based phototransistor (HPT) was fabricated. Near-infrared photodetection with excellent performance has been realized. This HPT exhibited a photoresponsivity of 390.5 A/W, a specific detectivity of 5.10 × $ 10^{12} $ Jones, a photogain 1.04 × $ 10^{5} $, and a photoresponse rise and decay time of 400 and 430 ms (λ = 900 nm, P = 16.2 µW/$ cm^{2} $), respectively. It also shows a broadband wavelength response from 405 to 1,020 nm. This superior performance could be attributed to the strong near-infrared absorption and the type-II (staggered) band alignment which ensures efficient charge transfer from 2DPI to $ MoS_{2} $. The face-to-face spatial configuration of $ MoS_{2} $—2DPI heterostructures ensures efficient transfer of photoinduced carriers through the interface, electron and holes can be separated due to the large band offsets. This work presents a significant step for the manipulation of high-performance NIR photodetector of two-dimensional covalent organic polymer-sensitized monolayer TMDCs. MoS (dpeaa)DE-He213 polyimide film (dpeaa)DE-He213 heterojunction (dpeaa)DE-He213 near-infrared phototransistor (dpeaa)DE-He213 Feng, Guangyuan aut Song, Yaru aut Zhang, Enbing aut Yuan, Jiangyan aut Fa, Dejuan aut Sun, Qisheng aut Lei, Shengbin aut Hu, Wenping aut Enthalten in Nano research [S.l.] : Tsinghua Press, 2008 15(2022), 9 vom: 15. Juni, Seite 8428-8434 (DE-627)57375361X (DE-600)2442216-2 1998-0000 nnns volume:15 year:2022 number:9 day:15 month:06 pages:8428-8434 https://dx.doi.org/10.1007/s12274-022-4438-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 15 2022 9 15 06 8428-8434 |
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10.1007/s12274-022-4438-8 doi (DE-627)SPR050930575 (SPR)s12274-022-4438-8-e DE-627 ger DE-627 rakwb eng Luo, Qingqing verfasserin aut 2D-polyimide film sensitized monolayer $ MoS_{2} $ phototransistor enabled near-infrared photodetection 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Tsinghua University Press 2022 Abstract Two-dimensional (2D) transition metal dichalcogenides (TMDCs)-based heterostructures open the door to fabricate various promising hybrid photodetectors, while it is still a challenge to achieve excellent and stable near-infrared (NIR) photoresponse. Here, a $ MoS_{2} $—2DPI (2D-polyimide (2DPI)) heterojunction-based phototransistor (HPT) was fabricated. Near-infrared photodetection with excellent performance has been realized. This HPT exhibited a photoresponsivity of 390.5 A/W, a specific detectivity of 5.10 × $ 10^{12} $ Jones, a photogain 1.04 × $ 10^{5} $, and a photoresponse rise and decay time of 400 and 430 ms (λ = 900 nm, P = 16.2 µW/$ cm^{2} $), respectively. It also shows a broadband wavelength response from 405 to 1,020 nm. This superior performance could be attributed to the strong near-infrared absorption and the type-II (staggered) band alignment which ensures efficient charge transfer from 2DPI to $ MoS_{2} $. The face-to-face spatial configuration of $ MoS_{2} $—2DPI heterostructures ensures efficient transfer of photoinduced carriers through the interface, electron and holes can be separated due to the large band offsets. This work presents a significant step for the manipulation of high-performance NIR photodetector of two-dimensional covalent organic polymer-sensitized monolayer TMDCs. MoS (dpeaa)DE-He213 polyimide film (dpeaa)DE-He213 heterojunction (dpeaa)DE-He213 near-infrared phototransistor (dpeaa)DE-He213 Feng, Guangyuan aut Song, Yaru aut Zhang, Enbing aut Yuan, Jiangyan aut Fa, Dejuan aut Sun, Qisheng aut Lei, Shengbin aut Hu, Wenping aut Enthalten in Nano research [S.l.] : Tsinghua Press, 2008 15(2022), 9 vom: 15. Juni, Seite 8428-8434 (DE-627)57375361X (DE-600)2442216-2 1998-0000 nnns volume:15 year:2022 number:9 day:15 month:06 pages:8428-8434 https://dx.doi.org/10.1007/s12274-022-4438-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 15 2022 9 15 06 8428-8434 |
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Enthalten in Nano research 15(2022), 9 vom: 15. Juni, Seite 8428-8434 volume:15 year:2022 number:9 day:15 month:06 pages:8428-8434 |
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Luo, Qingqing @@aut@@ Feng, Guangyuan @@aut@@ Song, Yaru @@aut@@ Zhang, Enbing @@aut@@ Yuan, Jiangyan @@aut@@ Fa, Dejuan @@aut@@ Sun, Qisheng @@aut@@ Lei, Shengbin @@aut@@ Hu, Wenping @@aut@@ |
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Here, a $ MoS_{2} $—2DPI (2D-polyimide (2DPI)) heterojunction-based phototransistor (HPT) was fabricated. Near-infrared photodetection with excellent performance has been realized. This HPT exhibited a photoresponsivity of 390.5 A/W, a specific detectivity of 5.10 × $ 10^{12} $ Jones, a photogain 1.04 × $ 10^{5} $, and a photoresponse rise and decay time of 400 and 430 ms (λ = 900 nm, P = 16.2 µW/$ cm^{2} $), respectively. It also shows a broadband wavelength response from 405 to 1,020 nm. This superior performance could be attributed to the strong near-infrared absorption and the type-II (staggered) band alignment which ensures efficient charge transfer from 2DPI to $ MoS_{2} $. The face-to-face spatial configuration of $ MoS_{2} $—2DPI heterostructures ensures efficient transfer of photoinduced carriers through the interface, electron and holes can be separated due to the large band offsets. 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|
| author |
Luo, Qingqing |
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Luo, Qingqing misc MoS misc polyimide film misc heterojunction misc near-infrared phototransistor 2D-polyimide film sensitized monolayer $ MoS_{2} $ phototransistor enabled near-infrared photodetection |
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2D-polyimide film sensitized monolayer $ MoS_{2} $ phototransistor enabled near-infrared photodetection MoS (dpeaa)DE-He213 polyimide film (dpeaa)DE-He213 heterojunction (dpeaa)DE-He213 near-infrared phototransistor (dpeaa)DE-He213 |
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misc MoS misc polyimide film misc heterojunction misc near-infrared phototransistor |
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misc MoS misc polyimide film misc heterojunction misc near-infrared phototransistor |
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misc MoS misc polyimide film misc heterojunction misc near-infrared phototransistor |
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2D-polyimide film sensitized monolayer $ MoS_{2} $ phototransistor enabled near-infrared photodetection |
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2D-polyimide film sensitized monolayer $ MoS_{2} $ phototransistor enabled near-infrared photodetection |
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Luo, Qingqing |
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Luo, Qingqing Feng, Guangyuan Song, Yaru Zhang, Enbing Yuan, Jiangyan Fa, Dejuan Sun, Qisheng Lei, Shengbin Hu, Wenping |
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Luo, Qingqing |
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10.1007/s12274-022-4438-8 |
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2d-polyimide film sensitized monolayer $ mos_{2} $ phototransistor enabled near-infrared photodetection |
| title_auth |
2D-polyimide film sensitized monolayer $ MoS_{2} $ phototransistor enabled near-infrared photodetection |
| abstract |
Abstract Two-dimensional (2D) transition metal dichalcogenides (TMDCs)-based heterostructures open the door to fabricate various promising hybrid photodetectors, while it is still a challenge to achieve excellent and stable near-infrared (NIR) photoresponse. Here, a $ MoS_{2} $—2DPI (2D-polyimide (2DPI)) heterojunction-based phototransistor (HPT) was fabricated. Near-infrared photodetection with excellent performance has been realized. This HPT exhibited a photoresponsivity of 390.5 A/W, a specific detectivity of 5.10 × $ 10^{12} $ Jones, a photogain 1.04 × $ 10^{5} $, and a photoresponse rise and decay time of 400 and 430 ms (λ = 900 nm, P = 16.2 µW/$ cm^{2} $), respectively. It also shows a broadband wavelength response from 405 to 1,020 nm. This superior performance could be attributed to the strong near-infrared absorption and the type-II (staggered) band alignment which ensures efficient charge transfer from 2DPI to $ MoS_{2} $. The face-to-face spatial configuration of $ MoS_{2} $—2DPI heterostructures ensures efficient transfer of photoinduced carriers through the interface, electron and holes can be separated due to the large band offsets. This work presents a significant step for the manipulation of high-performance NIR photodetector of two-dimensional covalent organic polymer-sensitized monolayer TMDCs. © Tsinghua University Press 2022 |
| abstractGer |
Abstract Two-dimensional (2D) transition metal dichalcogenides (TMDCs)-based heterostructures open the door to fabricate various promising hybrid photodetectors, while it is still a challenge to achieve excellent and stable near-infrared (NIR) photoresponse. Here, a $ MoS_{2} $—2DPI (2D-polyimide (2DPI)) heterojunction-based phototransistor (HPT) was fabricated. Near-infrared photodetection with excellent performance has been realized. This HPT exhibited a photoresponsivity of 390.5 A/W, a specific detectivity of 5.10 × $ 10^{12} $ Jones, a photogain 1.04 × $ 10^{5} $, and a photoresponse rise and decay time of 400 and 430 ms (λ = 900 nm, P = 16.2 µW/$ cm^{2} $), respectively. It also shows a broadband wavelength response from 405 to 1,020 nm. This superior performance could be attributed to the strong near-infrared absorption and the type-II (staggered) band alignment which ensures efficient charge transfer from 2DPI to $ MoS_{2} $. The face-to-face spatial configuration of $ MoS_{2} $—2DPI heterostructures ensures efficient transfer of photoinduced carriers through the interface, electron and holes can be separated due to the large band offsets. This work presents a significant step for the manipulation of high-performance NIR photodetector of two-dimensional covalent organic polymer-sensitized monolayer TMDCs. © Tsinghua University Press 2022 |
| abstract_unstemmed |
Abstract Two-dimensional (2D) transition metal dichalcogenides (TMDCs)-based heterostructures open the door to fabricate various promising hybrid photodetectors, while it is still a challenge to achieve excellent and stable near-infrared (NIR) photoresponse. Here, a $ MoS_{2} $—2DPI (2D-polyimide (2DPI)) heterojunction-based phototransistor (HPT) was fabricated. Near-infrared photodetection with excellent performance has been realized. This HPT exhibited a photoresponsivity of 390.5 A/W, a specific detectivity of 5.10 × $ 10^{12} $ Jones, a photogain 1.04 × $ 10^{5} $, and a photoresponse rise and decay time of 400 and 430 ms (λ = 900 nm, P = 16.2 µW/$ cm^{2} $), respectively. It also shows a broadband wavelength response from 405 to 1,020 nm. This superior performance could be attributed to the strong near-infrared absorption and the type-II (staggered) band alignment which ensures efficient charge transfer from 2DPI to $ MoS_{2} $. The face-to-face spatial configuration of $ MoS_{2} $—2DPI heterostructures ensures efficient transfer of photoinduced carriers through the interface, electron and holes can be separated due to the large band offsets. This work presents a significant step for the manipulation of high-performance NIR photodetector of two-dimensional covalent organic polymer-sensitized monolayer TMDCs. © Tsinghua University Press 2022 |
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| container_issue |
9 |
| title_short |
2D-polyimide film sensitized monolayer $ MoS_{2} $ phototransistor enabled near-infrared photodetection |
| url |
https://dx.doi.org/10.1007/s12274-022-4438-8 |
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Feng, Guangyuan Song, Yaru Zhang, Enbing Yuan, Jiangyan Fa, Dejuan Sun, Qisheng Lei, Shengbin Hu, Wenping |
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Feng, Guangyuan Song, Yaru Zhang, Enbing Yuan, Jiangyan Fa, Dejuan Sun, Qisheng Lei, Shengbin Hu, Wenping |
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| doi_str |
10.1007/s12274-022-4438-8 |
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2024-07-03T18:42:09.319Z |
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| score |
7.4029255 |